Improvement in Layer Quality of CuGaS2Grown by Vapor Phase Epitaxy with Metal Chlorides and H2S Sources

1993 ◽  
Vol 32 (S3) ◽  
pp. 145 ◽  
Author(s):  
Nozomu Tsuboi ◽  
Takehiro Isu ◽  
Yoshihide Ando ◽  
Masayuki Sawada ◽  
Seishi Iida
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Metal Chlorides

Vapor phase epitaxy of CuGaS2 using metal chlorides and H2S sources

1990 ◽  
Vol 99 (1-4) ◽  
pp. 752-756 ◽  
Author(s):  
A. Yamauchi ◽  
H. Saito ◽  
H. Kinito ◽  
S. Iida
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Metal Chlorides

Layer quality of Sb-doped GaAs grown by metalorganic vapor phase epitaxy

1993 ◽  
Vol 129 (1-2) ◽  
pp. 143-148 ◽  
Author(s):  
R. Yakimova ◽  
T. Paskova ◽  
I. Ivanov
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Effects of the group V/III ratio and a gan inter-layer on the crystal quality of InN grown by using the hydride vapor-phase epitaxy method

2015 ◽  
Vol 66 (6) ◽  
pp. 994-1000
Author(s):  
Ju-Hyung Ha ◽  
Juan Wang ◽  
Won-Jae Lee ◽  
Young-Jun Choi ◽  
Hae-Yong Lee ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Crystal Quality ◽  
Group V

scholarly journals Improvement of structural quality of AlN layers grown on c-plane sapphire substrate by metal–organic vapor phase epitaxy using post-growth annealing with trimethylgallium

AIP Advances ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 015203
Author(s):  
Masataka Imura ◽  
Hideki Inaba ◽  
Takaaki Mano ◽  
Nobuyuki Ishida ◽  
Fumihiko Uesugi ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Vapor Phase Epitaxy ◽  
Structural Quality ◽  
Organic Vapor ◽  
Metal Organic

Study of the structural quality of GaN epitaxial layers obtained by hydride vapor phase epitaxy using a low-temperature buffer layer

2015 ◽  
Vol 60 (6) ◽  
pp. 889-894
Author(s):  
I. A. Belogorohov ◽  
A. A. Donskov ◽  
S. N. Knyazev ◽  
Yu. P. Kozlova ◽  
V. F. Pavlov ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Structural Quality ◽  
Epitaxial Layers

Effects of Growth Temperatures on Crystal Quality of GaN by Vapor Phase Epitaxy Using GaCl3and NH3

2011 ◽  
Vol 50 (8R) ◽  
pp. 085501
Author(s):  
Tetsuzo Ueda ◽  
Masaaki Yuri ◽  
James S. Harris, Jr.
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Crystal Quality
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