scholarly journals Electrical Properties of Gallium Arsenide-Insulator Interface

1974 ◽  
Vol 13 (S2) ◽  
pp. 441 ◽  
Author(s):  
T. Miyazaki ◽  
N. Nakamura ◽  
A. Doi ◽  
T. Tokuyama
Keyword(s):  
Gallium Arsenide ◽  
Electrical Properties ◽  
Insulator Interface

Diffusion and electrical properties of silicon‐doped gallium arsenide

1985 ◽  
Vol 57 (12) ◽  
pp. 5181-5187 ◽  
Author(s):  
Mark E. Greiner ◽  
James F. Gibbons
Keyword(s):  
Gallium Arsenide ◽  
Electrical Properties ◽  
Silicon Doped

The Effect of Mass Resolution During Ion Implantation on Defect Formation and Electrical Properties in Gallium Arsenide.

1993 ◽  
Vol 316 ◽  
Author(s):  
Craig Jasper ◽  
Scott Klingbeil ◽  
K.S. Jones ◽  
H.G. Robinson
Keyword(s):  
Gallium Arsenide ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Threshold Voltage ◽  
Defect Formation ◽  
Mass Resolution ◽  
Resolving Power ◽  
Cross Contamination ◽  
Mass Resolving Power ◽  
Aperture Opening

ABSTRACTControl of threshold voltage during gallium arsenide (GaAs) Metal Semiconductor Field Effect Transistor (MESFET) processing is critical. Channel formation typically is done using ion implantation of 29Si+ from a SiF4 source. The use of Si+ presents a variety of potential cross-contamination problems. 28Si+ and 30Si+ beams can become contaminated with 28N2+, 28CO+, and 30NO+. While 29Si+ is relatively pure, the abundance of 29Si+ in the mass spectrum is 4.67%, thus reducing the potential beam current. This study investigates the effects of varying the mass resolving power of an Eaton 6200AV implanter on the electrical parameters and defect formation. The mass resolving power was adjusted by changing the mean path size through the slit of the aperture opening and magnetic separator current. Electrical device characterization measured a small shift in saturated source-drain current (Idss) and break down voltage, while threshold voltage shifts of approximately 80 mV were observed, with the various mass resolution powers. Transmission Electron Microscopy (TEM) showed that there is minimal change in the extended defect density with changes in isotope and aperture opening. Secondary Ion Mass Spectrometry (SIMS) measured the amount of cross contamination and these results correlated well with the observed changes in device electrical properties.

Transient Annealing of Ion Implanted Gallium Arsenide

1982 ◽  
Vol 13 ◽  
Author(s):  
J.S. Williams
Keyword(s):  
Gallium Arsenide ◽  
Liquid Phase ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Solid Phase ◽  
Dopant Activation ◽  
Implantation Damage ◽  
Dopant Redistribution ◽  
Ion Implanted

ABSTRACTThis paper provides a brief overview of the application of transient annealing to the removal of ion implantation damage and dopant activation in GaAs. It is shown that both the liquid phase and solid phase annealing processes are more complex in GaAs than those observed in Si. Particular attention is given to observations of damage removal, surface dissociation, dopant redistribution, solubility and the electrical properties of GaAs. The various annealing mechanisms are discussed and areas in need of further investigation are identified.

Inhomogeneities in the electrical properties of gallium arsenide crystals

1966 ◽  
Vol 9 (9) ◽  
pp. 853-857 ◽  
Author(s):  
J.C. Brice ◽  
R.E. Hunt ◽  
G.D. King ◽  
H.C. Wright
Keyword(s):  
Gallium Arsenide ◽  
Electrical Properties

Effect of Heat Treatment on Electrical Properties and Charge Collection Efficiency of X-Ray Sensors Based on Chrome-Compensated Gallium Arsenide

2016 ◽  
Vol 59 (2) ◽  
pp. 295-300
Author(s):  
A. N. Zarubin ◽  
I. I. Kolesnikova ◽  
A. D. Lozinskaya ◽  
V. A. Novikov ◽  
M. S. Skakunov ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Gallium Arsenide ◽  
Electrical Properties ◽  
Collection Efficiency ◽  
Charge Collection ◽  
Charge Collection Efficiency ◽  
X Ray
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