Investigation of the Semiconductor Surface Luminescence by Laser Excitation (GaAs)

1974 ◽  
Vol 13 (S2) ◽  
pp. 421 ◽  
Author(s):  
V Litovchenko ◽  
V. A. Zuev ◽  
D. B. Korbutyak ◽  
G. A. Sukach
1973 ◽  
Vol 17 (1) ◽  
pp. 353-358 ◽  
Author(s):  
V. A. Zuev ◽  
V. G. Litovchenko ◽  
G. A. Sukach ◽  
D. V. Korbutyak

1973 ◽  
pp. 353-358
Author(s):  
V. A. Zurv ◽  
V. G. Litovchenko ◽  
G. A. Sukach ◽  
D. V. Korbutyak

1997 ◽  
Vol 481 ◽  
Author(s):  
J. P. Callan ◽  
A. M.-T. Kim ◽  
L. Huangt ◽  
E. N. Glezer ◽  
E. Mazur

ABSTRACTWe use a new broadband spectroscopic technique to measure ultrafast changes in the dielectric function of a material over the spectral range 1.5–3.5 eV following intense 70-fs laser excitation. The results reveal the nature of the phase transformations which occur in the material following excitation. We studied the response of GaAs and Si. For GaAs, there are three distinct regimes of behavior as the pump fluence is increased — lattice heating, lattice disordering, and a semiconductor-to-metal transition.


ACS Photonics ◽  
2021 ◽  
Vol 8 (2) ◽  
pp. 550-556
Author(s):  
Javier Hernandez-Rueda ◽  
Marc L. Noordam ◽  
Irina Komen ◽  
L. Kuipers

2021 ◽  
pp. 138572
Author(s):  
Jing Guo ◽  
Ye-Jun Li ◽  
Jun-Ping Ma ◽  
Xian Tang ◽  
Xue-Shen Liu

2017 ◽  
Vol 27 (46) ◽  
pp. 1703899 ◽  
Author(s):  
Qiaoming Zhang ◽  
Francesca Leonardi ◽  
Stefano Casalini ◽  
Marta Mas-Torrent

Sign in / Sign up

Export Citation Format

Share Document