Investigation of Oxygen Adsorption on Tungsten at High Temperatures by Auger Electron Spectroscopy

1974 ◽  
Vol 13 (S2) ◽  
pp. 197 ◽  
Author(s):  
E. B. Bas ◽  
U. Bänninger
Keyword(s):  
Auger Electron Spectroscopy ◽  
High Temperatures ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Oxygen Adsorption

Nitridation of GaAs (001)-2x4 Surface Studied by Auger-Electron Spectroscopy

1998 ◽  
Vol 537 ◽  
Author(s):  
Igor Aksenov ◽  
Yoshinobu Nakada ◽  
Hajime Okumura
Keyword(s):  
Auger Electron Spectroscopy ◽  
High Temperatures ◽  
Line Shape ◽  
Low Temperatures ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Reference Sample ◽  
Initial Stage ◽  
Nitridation Temperature

AbstractAuger electron spectroscopy (AES) was used to investigate the processes taking place during the initial stages of nitridation of GaAs (001) surface. The analysis of the AES results combined with that of RHEED show that the processes taking place during nitridation greatly differ depending on the nitridation temperature. At low temperatures (≤ 200°C) nitridation is hindered by kinetic restrictions on atomic migration, whereas at high temperatures (≥ 500°C) the process of nitridation takes place simultaneously with the etching of the surface. However, for intermediate temperatures (300°C ∼ 400°C) the results indicate that a complete monolayer of N atoms may be formed on the substrate during the initial stage of nitridation. The post-nitridation annealing of the samples nitrided at the intermediate temperatures results in the formation of a crystalline GaN layer, the line shape of the AES signals from which is identical to that for a GaN reference sample.

scholarly journals Nitridation of GaAs (001)-2×4 Surface Studied by Auger-Electron Spectroscopy

1999 ◽  
Vol 4 (S1) ◽  
pp. 136-141
Author(s):  
Igor Aksenov ◽  
Yoshinobu Nakada ◽  
Hajime Okumura
Keyword(s):  
Auger Electron Spectroscopy ◽  
High Temperatures ◽  
Line Shape ◽  
Low Temperatures ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Reference Sample ◽  
Initial Stage ◽  
Nitridation Temperature

Auger electron spectroscopy (AES) was used to investigate the processes taking place during the initial stages of nitridation of GaAs (001) surface. The analysis of the AES results combined with that of RHEED show that the processes taking place during nitridation greatly differ depending on the nitridation temperature. At low temperatures (≤ 200°C) nitridation is hindered by kinetic restrictions on atomic migration, whereas at high temperatures (≥ 500°C) the process of nitridation takes place simultaneously with the etching of the surface. However, for intermediate temperatures (300°C ∼ 400°C) the results indicate that a complete monolayer of N atoms may be formed on the substrate during the initial stage of nitridation. The post-nitridation annealing of the samples nitrided at the intermediate temperatures results in the formation of a crystalline GaN layer, the line shape of the AES signals from which is identical to that for a GaN reference sample.

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