Fringing field effects in negative capacitance field-effect transistors with a ferroelectric gate insulator

2018 ◽  
Vol 57 (4S) ◽  
pp. 04FD07 ◽  
Author(s):  
Junichi Hattori ◽  
Koichi Fukuda ◽  
Tsutomu Ikegami ◽  
Hiroyuki Ota ◽  
Shinji Migita ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Insulator ◽  
Negative Capacitance ◽  
Field Effects ◽  
Fringing Field

Fringing Field Effects in Ferroelectric Negative Capacitance Field-Effect Transistors

2017 ◽  
Author(s):  
J. Hattori ◽  
K. Fukuda ◽  
T. Ikegami ◽  
H. Ota ◽  
S. Migita ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Negative Capacitance ◽  
Field Effects ◽  
Fringing Field

scholarly journals Device simulation of negative-capacitance field-effect transistors with a uniaxial ferroelectric gate insulator

2020 ◽  
Vol 11 (2) ◽  
pp. 145-156
Author(s):  
Junichi Hattori ◽  
Tsutomu Ikegami ◽  
Koichi Fukuda ◽  
Hiroyuki Ota ◽  
Shinji Migita ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Device Simulation ◽  
Gate Insulator ◽  
Negative Capacitance ◽  
Uniaxial Ferroelectric

scholarly journals High Magnetic Field Effects on Plasma Wave THz Detection in Field-Effect Transistors

2009 ◽  
Vol 116 (5) ◽  
pp. 939-940 ◽  
Author(s):  
S. Boubanga-Tombet ◽  
K. Nogajewski ◽  
F. Teppe ◽  
W. Knap ◽  
K. Karpierz ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Plasma Wave ◽  
High Magnetic Field ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Magnetic Field Effects ◽  
Field Effects ◽  
Thz Detection

MoS2 Negative-Capacitance Field-Effect Transistors with Subthreshold Swing below the Physics Limit

2018 ◽  
Vol 30 (28) ◽  
pp. 1800932 ◽  
Author(s):  
Xingqiang Liu ◽  
Renrong Liang ◽  
Guoyun Gao ◽  
Caofeng Pan ◽  
Chunsheng Jiang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Subthreshold Swing ◽  
Negative Capacitance
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