Carbon atom reactions in the initial stage of CVD graphene growth on copper: A first principles study

2014 ◽  
Vol 53 (5S1) ◽  
pp. 05FD08 ◽  
Author(s):  
Nobuo Tajima ◽  
Tomoaki Kaneko ◽  
Jun Nara ◽  
Takahisa Ohno
2010 ◽  
Vol 374 (44) ◽  
pp. 4563-4567 ◽  
Author(s):  
Tu Hu ◽  
Qiming Zhang ◽  
Jack C. Wells ◽  
Xingao Gong ◽  
Zhenyu Zhang

2014 ◽  
Vol 778-780 ◽  
pp. 1150-1153
Author(s):  
Hiroyuki Kageshima ◽  
Hiroki Hibino ◽  
Hiroshi Yamaguchi ◽  
Masao Nagase

The energetics for the Si desorption and the C adsorption at a [11-20] step on SiC(0001) surface are studied using the first-principles calculation. It is found that the [11-20] step is stable and nonreactive. The stability of the step is thought to govern the surface morphology during the graphene formation. It is shown that the Si pressure and the temperature are the control parameters for the surface morphology and the graphene quality.


2020 ◽  
Vol 744 ◽  
pp. 137237
Author(s):  
Pingping Xu ◽  
Shouye Sun ◽  
Shiyang Sun ◽  
Xin Tan ◽  
Yuan Ren ◽  
...  

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