Chemically Compatible Sacrificial Layer-Assisted Lift-Off Patterning Method for Fabrication of Organic Light-Emitting Displays

2011 ◽  
Vol 50 (8R) ◽  
pp. 080219 ◽  
Author(s):  
Wonsuk Choi ◽  
Min-Hoi Kim ◽  
Sin-Doo Lee
Keyword(s):  
Sacrificial Layer ◽  
Light Emitting ◽  
Organic Light ◽  
Lift Off

scholarly journals Mass Transfer of Microscale Light-Emitting Diodes to Unusual Substrates by Spontaneously Formed Vertical Tethers During Chemical Lift-Off

2019 ◽  
Vol 9 (20) ◽  
pp. 4243 ◽  
Author(s):  
Ja-Yeon Kim ◽  
Yoo-Hyun Cho ◽  
Hyun-Sun Park ◽  
Jae-Hyun Ryou ◽  
Min-Ki Kwon
Keyword(s):  
Mass Transfer ◽  
Sacrificial Layer ◽  
Adhesive Layer ◽  
Practical Method ◽  
Electrical Characteristics ◽  
Light Emitting ◽  
Full Color ◽  
Simplified Method ◽  
Lift Off ◽  
Led Arrays

A much simplified method for transferring Gallium nitride (GaN) light emitting didoes (LEDs) to an unusual substrate, such as glass, Si, polyethylene terephthalate, or polyurethane, was demonstrated with spontaneously formed vertical tethers during chemical lift-off (CLO), without requiring a sacrificial layer or extra process steps. The LED arrays resided on a stamp that was coated with an adhesive layer. After the layer with the LEDs was transferred to the new substrates, the stamp was removed by acetone to complete the preparation. Over 3 × 3 cm2 LED arrays transferred to various substrates without any damage and misorientation. We also found that the optical and electrical characteristics improved after transfer due to decease in built-in stress. This simple and practical method is expected to greatly facilitate the development of transferrable full color GaN microLEDs on various substrates with either greatly reduced or no damage.

Novel Organic Light-Emitting Transistors with PN-Hetero-Boundary Carrier Recombination Sites Fabricated by Lift-off Patterning of Organic Semiconductor Thin Films

2006 ◽  
Vol 965 ◽  
Author(s):  
Naotoshi Suganuma ◽  
Noriyuki Shimoji ◽  
Yoshiaki Oku ◽  
Kazumi Matsushige
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Organic Semiconductor ◽  
Boundary Structure ◽  
Light Emitting ◽  
Carrier Recombination ◽  
Organic Light ◽  
Semiconductor Thin Films ◽  
Light Emitting Transistors ◽  
Lift Off

ABSTRACTWe have devised a novel organic light-emitting transistor (OLET) with PN-hetero-boundary combined with hole and electron transport materials along carrier channels. In this device, a clear modulation of the current and luminance with the gate voltage is observed. The luminance of 100 cd/m2 or more has been observed at the source-source voltage of 15 V with the turn-on voltage of 10 V or less, which is lower than that of OLETs based on a single organic material. We have implemented the horizontal PN-hetero-boundary structure for the first time by using the photolithographic patterning of the organic semiconductor thin-films. This patterning technique can be applied to fabrication of not only organic light-emitting transistors we report in this paper but also organic integrated circuits or organic displays.

scholarly journals Two-Color Pixel Patterning for High-Resolution Organic Light-Emitting Displays Using Photolithography

Micromachines ◽  
2020 ◽  
Vol 11 (7) ◽  
pp. 650
Author(s):  
Yu Choi ◽  
Han Shin ◽  
Jongchan Son ◽  
Chunhee Park ◽  
Keun-Woo Park ◽  
...  
Keyword(s):  
High Resolution ◽  
Light Emitting Diode ◽  
Operating Voltage ◽  
Large Area ◽  
Significant Deterioration ◽  
Light Emitting ◽  
Organic Light ◽  
Lift Off ◽  
Color Pixel ◽  
Negative Tone

Nowadays, the display industry is endeavoring to develop technology to provide large-area organic light-emitting diode (OLED) display panels with 8K or higher resolution. Although the selective deposition of organic molecules through shadow masks has proven to be the method of choice for mobile panels, it may not be so when independently defined high-resolution pixels are to be manufactured on a large substrate. This technical challenge motivated us to adopt the well-established photolithographic protocol to the OLED pixel patterning. In this study, we demonstrate the two-color OLED pixels integrated on a single substrate using a negative-tone highly fluorinated photoresist (PR) and fluorous solvents. Preliminary experiments were performed to examine the probable damaging effects of the developing and stripping processes upon a hole-transporting layer (HTL). No significant deterioration in the efficiency of the develop-processed device was observed. Efficiency of the device after lift-off was up to 72% relative to that of the reference device with no significant change in operating voltage. The procedure was repeated to successfully obtain two-color pixel arrays. Furthermore, the patterning of 15 μm green pixels was accomplished. It is expected that photolithography can provide a useful tool for the production of high-resolution large OLED displays in the near future.

Novel organic light-emitting transistors with PN-heteroboundary carrier recombination sites fabricated by lift-off patterning of organic semiconductor thin films

2007 ◽  
Vol 22 (11) ◽  
pp. 2982-2986 ◽  
Author(s):  
Naotoshi Suganuma ◽  
Noriyuki Shimoji ◽  
Yoshiaki Oku ◽  
Kazumi Matsushige
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Light Emitting ◽  
Carrier Recombination ◽  
Organic Light ◽  
Semiconductor Thin Films ◽  
Lift Off ◽  
P Type

The authors have devised a novel organic light-emitting transistor (OLET) with a PN-heteroboundary combined with hole and electron transport materials (in other words, p-type and n-type organic semiconductors) along carrier channels. In this device, a clear modulation of the current and luminance with the gate voltage was observed. A luminance of 100 cd/m2 or more has been observed at the source–source voltage of 15 V with the turn-on voltage of 10 V or less, which is lower than that of OLETs based on a single organic material. The horizontal PN-heteroboundary structure has been implemented for the first time by using the photolithographic patterning of organic semiconductor thin films. This patterning technique can be applied to the fabrication of not only the OLETs reported in this work, but also to organic integrated circuits or organic displays.

Chemical Lift-Off of Blue Light-Emitting Diodes Grown on Sapphire Substrate with an Oxide-Patterned Sacrificial Layer

2012 ◽  
Vol 45 (7) ◽  
pp. 35-37
Author(s):  
C.-T. Pan ◽  
K.-C. Shen ◽  
D.-S. Wuu ◽  
H.-H. Hsueh ◽  
R.-H. Horng
Keyword(s):  
Blue Light ◽  
Sapphire Substrate ◽  
Light Emitting Diodes ◽  
Sacrificial Layer ◽  
Light Emitting ◽  
Lift Off
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