Effects of plasma power on material and optical quality of GaN nanorods grown by plasma-assisted molecular beam epitaxy

2014 ◽  
Vol 7 (11) ◽  
pp. 115502 ◽  
Author(s):  
Dever P. Norman ◽  
Samir M. Hamad ◽  
Li-Wei Tu ◽  
Yuan-Ting Lin ◽  
Chen-Yu Lin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
Plasma Power

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

Surfactant-Mediated Growth of Aigaas by Molecular Beam Epitaxy

1995 ◽  
Vol 379 ◽  
Author(s):  
Ron Kaspi ◽  
Keith R. Evans ◽  
Don C. Reynolds ◽  
Jeff Brown ◽  
Marek Skowronski
Keyword(s):  
Surface Roughness ◽  
Steady State ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
Optical Quality ◽  
Growth Surface ◽  
High Energy Electron ◽  
Extended Reflection

ABSTRACTAntimony was used as a surfactant during solid-source molecular beam epitaxy of AIGaAs layers. A steady-state surface-segregated population of Sb was maintained at the AIGaAs growth surface by providing a continuous Sb2 flux to compensate for loss due to thermal desorption. Above ∼ 650 °C, the incorporation rate of Sb was negligible, thereby allowing the deposition of AlGaAs layers despite the presence of Sb at the surface. A significant improvement in the optical quality of Al0.24Ga0 76As layers was observed by photoluminescence. In addition, extended reflection high energy electron diffraction oscillations and a reduction in Al0.24Ga0.76As surface roughness was observed when Sb was employed as a surfactant.

scholarly journals Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy

Materials ◽  
2021 ◽  
Vol 14 (21) ◽  
pp. 6270
Author(s):  
Tristan Smołka ◽  
Katarzyna Posmyk ◽  
Maja Wasiluk ◽  
Paweł Wyborski ◽  
Michał Gawełczyk ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Internal Quantum Efficiency ◽  
Radiative Lifetime ◽  
Optical Quality ◽  
Structural Quality ◽  
Emission Quenching ◽  
Inp Quantum Dots

We present an experimental study on the optical quality of InAs/InP quantum dots (QDs). Investigated structures have application relevance due to emission in the 3rd telecommunication window. The nanostructures are grown by ripening-assisted molecular beam epitaxy. This leads to their unique properties, i.e., low spatial density and in-plane shape symmetry. These are advantageous for non-classical light generation for quantum technologies applications. As a measure of the internal quantum efficiency, the discrepancy between calculated and experimentally determined photon extraction efficiency is used. The investigated nanostructures exhibit close to ideal emission efficiency proving their high structural quality. The thermal stability of emission is investigated by means of microphotoluminescence. This allows to determine the maximal operation temperature of the device and reveal the main emission quenching channels. Emission quenching is predominantly caused by the transition of holes and electrons to higher QD’s levels. Additionally, these carriers could further leave the confinement potential via the dense ladder of QD states. Single QD emission is observed up to temperatures of about 100 K, comparable to the best results obtained for epitaxial QDs in this spectral range. The fundamental limit for the emission rate is the excitation radiative lifetime, which spreads from below 0.5 to almost 1.9 ns (GHz operation) without any clear spectral dispersion. Furthermore, carrier dynamics is also determined using time-correlated single-photon counting.

Structural and optical quality of InGaAsN quantum wells grown on misoriented GaAs (111)b substrates by molecular beam epitaxy

2004 ◽  
Vol 270 (1-2) ◽  
pp. 62-68 ◽  
Author(s):  
J. Miguel-Sánchez ◽  
M. Hopkinson ◽  
M. Gutiérrez ◽  
P. Navaretti ◽  
H.Y. Liu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Optical Quality

Laser Quality AlGaAs-GaAs Quantum Wells Grown on Low Temperature GaAs

1991 ◽  
Vol 241 ◽  
Author(s):  
Y. Hwang ◽  
D. Zhang ◽  
T. Zhang ◽  
M. Mytych ◽  
R. M. Kolbas
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Barrier Layer ◽  
Molecular Beam ◽  
Optical Quality ◽  
First Order ◽  
Gaas Buffer Layer ◽  
Low Temperature Gaas ◽  
Lt Gaas

ABSTRACTIn this work we demonstrate that photopumped quantum wellheterostructure lasers with excellent optical quality can be grown ontop of a LT GaAs buffer layer by molecular beam epitaxy. Hightemperature thermal annealing of these lasers blue-shifts the laseremission wavelengths but the presence/absence of a LT GaAs layerhad little effect on the overall laser thresholds. Also, to first order itwas not necessary to include an AlAs barrier layer to preventadverse effects (as has been necessary in the gate stack of MESFETs to prevent carrier compensation).

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