AbstractDistributed Bragg reflectors composed of InGaAs/InAlAs alternating layers have been grown on InP substrates by MOCVD. To obtain high performance, the growth condition has been traded off between surface roughness and crystal quality. Using in-situ laser reflectometry, the precise control of layer thickness and composition has been achieved for reproducible DBR growth. The optimal mirror performance and sharp interfaces have been observed in the DBR grown at 650'C. In order to avoid band-edge absorption 6% of Al has been added to In 0.53Ga0.47As to produce quarternary In0.53Ga 0.41Al 0.06As/InAlAs Bragg reflector exhibiting high reflectivity at 1.55 μm.
Highly reflective and conductive distributed Bragg reflectors are key for high-performance III-nitride optoelectronic devices, such as vertical cavity surface emitting lasers, but they still suffer from lack of lattice-matched conductive DBR and uncontrollable processes.
High performance resonant cavity light emitting diode with dielectric distributed Bragg reflectors