Observation of Landau Level for a Tilted Dirac Cone by Measuring Magnetoresistance of Organic Conductor α-(BEDT-TTF)2I3

2010 ◽  
Vol 7 ◽  
pp. 16
Author(s):  
Yoshikazu Suzumura
2016 ◽  
Vol 7 (1) ◽  
Author(s):  
Michihiro Hirata ◽  
Kyohei Ishikawa ◽  
Kazuya Miyagawa ◽  
Masafumi Tamura ◽  
Claude Berthier ◽  
...  

2012 ◽  
Vol 11 ◽  
pp. 145-150 ◽  
Author(s):  
TOHRU KAWARABAYASHI ◽  
YASUHIRO HATSUGAI ◽  
TAKAHIRO MORIMOTO ◽  
HIDEO AOKI

The notion of chiral symmetry for the conventional Dirac cone is generalized to include the tilted Dirac cones, where the generalized chiral operator turns out to be non-hermitian. It is shown that the generalized chiral symmetry generically protects the zero modes (n = 0 Landau level) of the Dirac cone even when tilted. The present generalized symmetry is equivalent to the condition that the Dirac Hamiltonian is elliptic as a differential operator, which provides an explicit relevance to the index theorem.


1978 ◽  
Vol 39 (C6) ◽  
pp. C6-1135-C6-1137 ◽  
Author(s):  
R. A. Gordon ◽  
J. B. Frandsen
Keyword(s):  

2020 ◽  
Vol 16 (4) ◽  
pp. 595-607 ◽  
Author(s):  
Mu Wen Chuan ◽  
Kien Liong Wong ◽  
Afiq Hamzah ◽  
Shahrizal Rusli ◽  
Nurul Ezaila Alias ◽  
...  

Catalysed by the success of mechanical exfoliated free-standing graphene, two dimensional (2D) semiconductor materials are successively an active area of research. Silicene is a monolayer of silicon (Si) atoms with a low-buckled honeycomb lattice possessing a Dirac cone and massless fermions in the band structure. Another advantage of silicene is its compatibility with the Silicon wafer fabrication technology. To effectively apply this 2D material in the semiconductor industry, it is important to carry out theoretical studies before proceeding to the next step. In this paper, an overview of silicene and silicene nanoribbons (SiNRs) is described. After that, the theoretical studies to engineer the bandgap of silicene are reviewed. Recent theoretical advancement on the applications of silicene for various field-effect transistor (FET) structures is also discussed. Theoretical studies of silicene have shown promising results for their application as FETs and the efforts to study the performance of bandgap-engineered silicene FET should continue to improve the device performance.


2021 ◽  
Vol 103 (15) ◽  
Author(s):  
Olga Iakutkina ◽  
Lena Nadine Majer ◽  
Guilherme Gorgen Lesseux ◽  
Gabriele Untereiner ◽  
Martin Dressel

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