The Valley-Degeneracy-Breaking Induced Arbitrary-Chern Number Insulator on Square Lattice and the Quantum Hall Effect

2015 ◽  
Vol 84 (2) ◽  
pp. 024604
Author(s):  
Yi-Xiang Wang ◽  
Fu-Xiang Li ◽  
Jie Cao
2020 ◽  
Vol 7 (8) ◽  
pp. 1280-1287 ◽  
Author(s):  
Jun Ge ◽  
Yanzhao Liu ◽  
Jiaheng Li ◽  
Hao Li ◽  
Tianchuang Luo ◽  
...  

Abstract The quantum Hall effect (QHE) with quantized Hall resistance of h/νe2 started the research on topological quantum states and laid the foundation of topology in physics. Since then, Haldane proposed the QHE without Landau levels, showing nonzero Chern number |C| = 1, which has been experimentally observed at relatively low temperatures. For emerging physics and low-power-consumption electronics, the key issues are how to increase the working temperature and realize high Chern numbers (C > 1). Here, we report the experimental discovery of high-Chern-number QHE (C = 2) without Landau levels and C = 1 Chern insulator state displaying a nearly quantized Hall resistance plateau above the Néel temperature in MnBi2Te4 devices. Our observations provide a new perspective on topological matter and open new avenues for exploration of exotic topological quantum states and topological phase transitions at higher temperatures.


2012 ◽  
Vol 376 (16) ◽  
pp. 1366-1370 ◽  
Author(s):  
Santanu K. Maiti ◽  
Moumita Dey ◽  
S.N. Karmakar

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