scholarly journals Thin film transistor based on two-dimensional organic-inorganic hybrid perovskite

2020 ◽  
Vol 69 (19) ◽  
pp. 198102
Author(s):  
Ning Guo ◽  
Zhou Zhou ◽  
Jian Ni ◽  
Hong-Kun Cai ◽  
Jian-Jun Zhang ◽  
...  
Author(s):  
Seung-Hwan Lee ◽  
Hyun-Jun Jeong ◽  
Ki-Lim Han ◽  
GeonHo Beak ◽  
Jin-Seong Park

Indium oxide and indicone hybrid films consisting of indium oxide and organic aromatic linker are grown by molecular layer deposition (MLD) using bis(trimethylsilyl)amido-diethyl Indium (INCA-1) as the indium precursor, hydrogen...


2018 ◽  
Vol 6 (5) ◽  
pp. 1171-1175 ◽  
Author(s):  
Zhenyue Wu ◽  
Chengmin Ji ◽  
Zhihua Sun ◽  
Sasa Wang ◽  
Sangen Zhao ◽  
...  

Broadband white-light emission with an ultrahigh CRI of 93 based on an organic–inorganic hybrid 2D corrugated perovskite.


2021 ◽  
Vol 9 ◽  
Author(s):  
Inhee Maeng ◽  
Hiroshi Tanaka ◽  
Valynn Katrine Mag-usara ◽  
Makoto Nakajima ◽  
Masakazu Nakamura ◽  
...  

All mixed hybrid perovskite (MA(Sn, Pb)(Br,I)3) thin film was fabricated by sequential vacuum evaporation method. To optimize the first layer with PbBr2 and SnI2, we performed different annealing treatments. Further, MA(Sn, Pb)(Br, I)3 thin film was synthesized on the optimized first layer by evaporating MAI and post-annealing. The formed hybrid perovskite thin film exhibited absorptions at 1.0 and 1.7 THz with small absorbance (<10%). Moreover, no chemical and structural defect-incorporated absorption was found. In this study, the possibility of changing terahertz absorption frequency through the mixture of metal cations (Sn+ and Pb+) and halogen anions (Br− and I−) was verified.


AIP Advances ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 045130 ◽  
Author(s):  
Sreekanth J. Varma ◽  
Jayesh Cherusseri ◽  
Jinxin Li ◽  
Jitesh Kumar ◽  
Elizabeth Barrios ◽  
...  

2019 ◽  
Vol 123 (24) ◽  
pp. 15251-15257 ◽  
Author(s):  
Qikun Li ◽  
Sheng Bi ◽  
Jingyuan Bu ◽  
Chaolong Tang ◽  
Zhongliang Ouyang ◽  
...  

1993 ◽  
Vol 14 (4) ◽  
pp. 1199-1208 ◽  
Author(s):  
K. Sumiyoshi ◽  
K. Takatori ◽  
N. Takahashi ◽  
Y. Hirai

1984 ◽  
Vol 33 ◽  
Author(s):  
H. C. Tuan

ABSTRACTIn this paper, the amorphous silicon thin film transistor (a-Si:HTFT) technology is reviewed. Its applications to both one- and two-dimensional large-area devices are described. The issues related to the fabrication of TFT arrays on large-area substrates are also discussed.


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