Thermal annealing effects of InGaAs (1.0 eV) and InGaAs (0.7 eV) sub-cells of inverted metamorphic four junction (IMM4J) solar cells under 1 MeV electron irradiation
2014 ◽
Vol 599
(1)
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pp. 23-29
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2009 ◽
Vol 55
(3(1))
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pp. 1074-1078
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2003 ◽
Vol 79
(4)
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pp. 425-438
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1998 ◽
Vol 55
(4)
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pp. 313-322
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2013 ◽
Vol 5
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pp. 1775-1780
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