scholarly journals Ionizing radiation damage mechanism and biases correlation of AlGaN/GaN high electron mobility transistor devices

2020 ◽  
Vol 69 (7) ◽  
pp. 078501
Author(s):  
Shi-Jian Dong ◽  
Hong-Xia Guo ◽  
Wu-Ying Ma ◽  
Ling Lv ◽  
Xiao-Yu Pan ◽  
...  
Keyword(s):  
Ionizing Radiation ◽  
Radiation Damage ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Damage Mechanism ◽  
High Electron ◽  
High Electron Mobility

scholarly journals High power microwave damage mechanism on high electron mobility transistor

2016 ◽  
Vol 65 (16) ◽  
pp. 168501
Author(s):  
Li Zhi-Peng ◽  
Li Jing ◽  
Sun Jing ◽  
Liu Yang ◽  
Fang Jin-Yong
Keyword(s):  
High Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Damage Mechanism ◽  
High Electron ◽  
High Electron Mobility ◽  
High Power Microwave ◽  
Power Microwave

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer

Double δ-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application

2006 ◽  
Vol 45 (No. 35) ◽  
pp. L932-L934 ◽  
Author(s):  
Li-Hsin Chu ◽  
Heng-Tung Hsu ◽  
Edward-Yi Chang ◽  
Tser-Lung Lee ◽  
Sze-Hung Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode
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