scholarly journals Temperature dependence of single-event transient response in devices with selective-buried-oxide structure

2019 ◽  
Vol 68 (4) ◽  
pp. 048501
Author(s):  
Zhan-Zhan Gao ◽  
Peng-Fei Hou ◽  
Hong-Xia Guo ◽  
Bo Li ◽  
Hong-Jia Song ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Transient Response ◽  
Single Event ◽  
Single Event Transient ◽  
Oxide Structure ◽  
Buried Oxide

Parasitic bipolar amplification in a single event transient and its temperature dependence

2012 ◽  
Vol 21 (9) ◽  
pp. 099401 ◽  
Author(s):  
Zheng Liu ◽  
Shu-Ming Chen ◽  
Jian-Jun Chen ◽  
Jun-Rui Qin ◽  
Rong-Rong Liu
Keyword(s):  
Temperature Dependence ◽  
Single Event ◽  
Single Event Transient ◽  
Bipolar Amplification

The role of parasitic elements in the single-event transient response of linear circuits

2002 ◽  
Vol 49 (6) ◽  
pp. 3115-3120 ◽  
Author(s):  
A.L. Sternberg ◽  
L.W. Massengill ◽  
S. Buchner ◽  
R.L. Pease ◽  
Y. Boulghassoul ◽  
...  
Keyword(s):  
Transient Response ◽  
Single Event ◽  
Single Event Transient ◽  
Linear Circuits

An Investigation of Single Event Transient Response in 45-nm and 32-nm SOI RF-CMOS Devices and Circuits

2013 ◽  
Vol 60 (6) ◽  
pp. 4405-4411 ◽  
Author(s):  
Troy D. England ◽  
Rajan Arora ◽  
Zachary E. Fleetwood ◽  
Nelson E. Lourenco ◽  
Kurt A. Moen ◽  
...  
Keyword(s):  
Transient Response ◽  
Rf Cmos ◽  
Single Event ◽  
Single Event Transient

Effect of Voltage Fluctuations on the Single Event Transient Response of Deep Submicron Digital Circuits

2007 ◽  
Vol 54 (6) ◽  
pp. 2495-2499 ◽  
Author(s):  
Matthew J. Gadlage ◽  
Ronald D. Schrimpf ◽  
Balaji Narasimham ◽  
Bharat L. Bhuva ◽  
Paul H. Eaton ◽  
...  
Keyword(s):  
Transient Response ◽  
Digital Circuits ◽  
Deep Submicron ◽  
Single Event ◽  
Single Event Transient ◽  
Voltage Fluctuations

Single-Event Transient Response of InGaAs MOSFETs

2014 ◽  
Vol 61 (6) ◽  
pp. 3550-3556 ◽  
Author(s):  
Kai Ni ◽  
En Xia Zhang ◽  
Nicholas C. Hooten ◽  
William G. Bennett ◽  
Michael W. McCurdy ◽  
...  
Keyword(s):  
Transient Response ◽  
Single Event ◽  
Single Event Transient

scholarly journals Supply Voltage and Temperature Dependence of Single-Event Transient in 28-nm FDSOI MOSFETs

Symmetry ◽  
2019 ◽  
Vol 11 (6) ◽  
pp. 793 ◽  
Author(s):  
Jingyan Xu ◽  
Yang Guo ◽  
Ruiqiang Song ◽  
Bin Liang ◽  
Yaqing Chi
Keyword(s):  
Temperature Dependence ◽  
Temperature Effect ◽  
Pulse Width ◽  
Supply Voltage ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Single Event ◽  
Single Event Transient ◽  
Short Channel ◽  
28 Nm

Based on three-dimensional (3D) technology computer aided design (TCAD) simulations, the supply voltage and temperature dependence of single-event transient (SET) pulse width in 28-nm fully-depleted silicon-on-insulator (FDSOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) is investigated. FDSOI MOSFETs are symmetry devices with a superior control of the short channel effects (SCEs) and single-event effects (SEEs). Previous studies have suggested that the SET width is invariant when the temperature changes in FDSOI devices. Simulation results show that the SET pulse width increases as the supply voltage decreases. When the supply voltage is below 0.6 V, the SET pulse width increases sharply with the decrease of the supply voltage. The SET pulse width is not sensitive to temperature when the supply voltage is 1 V. However, when the supply voltage is 0.6 V or less, the SET pulse width exhibits an anti-temperature effect, and the anti-temperature effect is significantly enhanced as the supply voltage drops. Besides, the mechanism is analyzed from the aspects of saturation current and charge collection.

A Theory of Single-Event Transient Response in Cross-Coupled Negative Resistance Oscillators

2010 ◽  
Author(s):  
Stephen J. Horst ◽  
Stanley D. Phillips ◽  
Prabir Saha ◽  
John D. Cressler ◽  
Dale McMorrow ◽  
...  
Keyword(s):  
Transient Response ◽  
Negative Resistance ◽  
Single Event ◽  
Single Event Transient
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