scholarly journals Graphene-based field effect transistor with ion-gel film gate

2019 ◽  
Vol 68 (9) ◽  
pp. 097301
Author(s):  
Hang Song ◽  
Jie Liu ◽  
Chao Chen ◽  
Long Ba
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gel Film ◽  
Ion Gel ◽  
Effect Transistor

Tunneling field effect transistor integrated with black phosphorus-MoS2 junction and ion gel dielectric

2017 ◽  
Vol 110 (3) ◽  
pp. 033103 ◽  
Author(s):  
Jiao Xu ◽  
Jingyuan Jia ◽  
Shen Lai ◽  
Jaehyuk Ju ◽  
Sungjoo Lee
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Black Phosphorus ◽  
Ion Gel ◽  
Effect Transistor

Vertical‐Tunneling Field‐Effect Transistor Based on WSe 2 ‐MoS 2 Heterostructure with Ion Gel Dielectric

2020 ◽  
Vol 6 (7) ◽  
pp. 2000091 ◽  
Author(s):  
Hyun Bae Jeon ◽  
Gwang Hyuk Shin ◽  
Khang June Lee ◽  
Sung‐Yool Choi
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ion Gel ◽  
Effect Transistor

Ion Gel Coated Graphene Field Effect Transistor for Humidity Sensing Applications

2021 ◽  
pp. 1-1
Author(s):  
De-Sheng Liu ◽  
Usman Khan ◽  
Peihang Li ◽  
Mansoor Ali Khana ◽  
Jiang Wu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Humidity Sensing ◽  
Sensing Applications ◽  
Graphene Field Effect Transistor ◽  
Ion Gel ◽  
Effect Transistor

Top-gate field-effect transistor based on monolayer WS2 with an ion-gel gate dielectric

2022 ◽  
Author(s):  
Dae Hyun Jung ◽  
Guen Hyung Oh ◽  
Sang-il Kim ◽  
TAEWAN KIM
Keyword(s):  
Contact Resistance ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Electrical Contact ◽  
Chemical Vapour ◽  
Metal Electrode ◽  
Electrical Contact Resistance ◽  
Ion Gel ◽  
Effect Transistor

Abstract A top-gate field-effect transistor (FET), based on monolayer (ML) tungsten disulfide (WS2), and with an ion-gel dielectric was developed. The high electrical contact resistance of the Schottky contacts at the n-type transition metal dichalcogenides/metal electrode interfaces often adversely affects the device performance. We report the contact resistance and Schottky barrier height of an FET with Au electrodes. The FET is based on ML WS2 that was synthesised using chemical vapour deposition and was assessed using the transfer-length method and low-temperature measurements. Raman and photoluminescence spectra were recorded to determine the optical properties of the WS2 layers. The ML WS2 FET with an ion-gel top gate dielectric exhibits n-type behaviour, with a mobility, on/off ratio of 1.97 cm2/V·s, 1.51×105, respectively.

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

2014 ◽  
Vol E97.C (7) ◽  
pp. 677-682
Author(s):  
Sung YUN WOO ◽  
Young JUN YOON ◽  
Jae HWA SEO ◽  
Gwan MIN YOO ◽  
Seongjae CHO ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Biosensor Based on Ion-Sensitive Field-Effect Transistor Using Minimum Contact to Float-ing Gate

2019 ◽  
Vol 24 (4) ◽  
pp. 407-414
Author(s):  
Oksana V. Gubanova ◽  
◽  
Evgeniy V. Kuznetsov ◽  
Elena N. Rybachek ◽  
Alexander N. Saurov ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor
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