scholarly journals Electrical conductivity and infrared ray photoconductivity for lattice distorted SmNiO3 perovskite oxide film

2019 ◽  
Vol 68 (2) ◽  
pp. 026701
Author(s):  
Hai-Yang Hu ◽  
Ji-Kun Chen ◽  
Fei Shao ◽  
Yong Wu ◽  
Kang-Kang Meng ◽  
...  
2021 ◽  
Author(s):  
Tushar Kanti Bhowmik ◽  
Md Sariful Sheikh ◽  
Anup Pradhan Sakhya ◽  
Alo Dutta ◽  
T. P. Sinha

2013 ◽  
Vol 283 ◽  
pp. 65-73 ◽  
Author(s):  
Mukesh Kumar ◽  
A.K. Sigdel ◽  
T. Gennett ◽  
J.J. Berry ◽  
J.D. Perkins ◽  
...  

2015 ◽  
Author(s):  
Takeo Ohsawa ◽  
Katsuya Iwaya ◽  
Yoshinori Okada ◽  
Ryota Shimizu ◽  
Susumu Shiraki ◽  
...  

2015 ◽  
Vol 27 (2) ◽  
pp. 629-634 ◽  
Author(s):  
Ming Li ◽  
Huairuo Zhang ◽  
Stuart N. Cook ◽  
Linhao Li ◽  
John A. Kilner ◽  
...  

2007 ◽  
Vol 997 ◽  
Author(s):  
Hwan-Soo Lee

AbstractWe have investigated charge transport properties with current perpendicular to the plane across the interface between a Cr-doped SrZrO3 perovskite oxide film and different top electrode metals. The measured resistance showed a wide variation depending on the top electrode metal, and suggested the interfacial properties with respect to contacting electrode metal kinds are responsible for the change in I-V characteristics (IVCs). The observed I-V curves were modeled with the equation I(V) = aV+bV2, where the variation of a was related to the work function of the metal whereas the variation of b was related to the oxygen affinity of the metal, consistent with space charge limited conduction through a defected interface. Additionally, the resistive switching was attributed to a change in both the a and the b coefficients. We speculate that voltage (or current) induced vacancy motion can account for a change in trap density in the oxide near the metallic electrical contact, and thus trapping or detrapping of charge carriers, showing the conductivity modulation across the junction.


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