scholarly journals Effect of lattice mismatch stress on magnetic domain of epitaxial single crystal (BiTm)3(GaFe)5O12 film

2018 ◽  
Vol 67 (11) ◽  
pp. 117801
Author(s):  
Hao Jun-Xiang ◽  
Yang Qing-Hui ◽  
Zhang Huai-Wu ◽  
Wen Qi-Ye ◽  
Zhong Zhi-Yong ◽  
...  
Keyword(s):  
Single Crystal ◽  
Lattice Mismatch ◽  
Magnetic Domain ◽  
Mismatch Stress

Time Dependence of γ/γ' Lattice Mismatch in Creep-Deformed Single Crystal Superalloy SC16 at 1173 K

2007 ◽  
Vol 539-543 ◽  
pp. 3059-3063 ◽  
Author(s):  
G. Schumacher ◽  
N. Darowski ◽  
I. Zizak ◽  
Hellmuth Klingelhöffer ◽  
W. Chen ◽  
...  
Keyword(s):  
Single Crystal ◽  
Lattice Mismatch ◽  
Lattice Misfit ◽  
Peak Position ◽  
Single Crystal Superalloy ◽  
Tensile Creep ◽  
Full Width ◽  
X Ray Diffraction ◽  
X Ray ◽  
Time Period

The profiles of 001 and 002 reflections have been measured at 1173 K as a function of time by means of X-ray diffraction (XRD) on tensile-creep deformed specimens of single crystal superalloy SC16. Decrease in line width (full width at half maximum: FWHM) by about 7 % and increase in peak position by about 3x10-4 degrees was detected after 8.5x104 s. Broadening of the 002 peak profile indicated a more negative value of the lattice misfit after the same time period. The results are discussed in the context of the anisotropic arrangement of dislocations at the γ/γ’ interfaces during creep and their rearrangement during the thermal treatment at 1173 K.

Single Crystal Zirconia Thin Films from Liquid Precursors

1989 ◽  
Vol 155 ◽  
Author(s):  
K. T. Miller ◽  
F. F. Lange
Keyword(s):  
Single Crystal ◽  
Lattice Mismatch ◽  
Lattice Parameter ◽  
Precursor Film ◽  
Yttrium Nitrate ◽  
X Ray Diffraction ◽  
Zirconium Acetate ◽  
Liquid Precursors ◽  
Crystal Film ◽  
Crystal Films

ABSTRACTEpitaxial, single-crystal films of ZrO2 (Y2O3) were formed on (100) oriented single crystal substrates of ZrO2 (9.5 mol% Y2O3) using water-based solutions of zirconium acetate and yttrium nitrate as a precursor. Film compostions of ZrO2 (0 - 40 mol% Y2O3) were examined; since the lattice parameter of ZrO2 (Y2O3) increases with yttria content, the lattice mismatch was systematically varied to a maximum of 1.5%. Precursor films were deposited by spin coating, pyrolyzed, and held for 1 hour at 900°C, 1000°C, and 1100°C. X-ray diffraction showed that a strongly oriented film had developed after pyrolysis of the precursor. In addition, all samples, except those treated at 1100°C containing 6 – 15 mol% Y2O3, gave (111) peaks, indicating film polycrystallinity. Electron back-scattering patterns showed that epitaxial single crystals were formed at 1100°C for films containing 3 – 20 mol% Y2O3. Scanning electron microscopy showed that the epitaxial films had a porous structure. These results indicate that the epitaxy is a two-stage process: oriented nucleation upon pyrolysis, followed, for low mismatches, by subsequent consolidation into a single-crystal film above 1000°C.

scholarly journals Formation of Buried Epitaxial Si-Ge Alloy Layers in Si Crystal by High Dose Ge ION Implantation

1991 ◽  
Vol 235 ◽  
Author(s):  
Kin Man Yu ◽  
Ian G. Brown ◽  
Seongil Im
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Lattice Mismatch ◽  
Solid Phase ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Ion Channeling

ABSTRACTWe have synthesized single crystal Si1−xGex alloy layers in Si <100> crystals by high dose Ge ion implantation and solid phase epitaxy. The implantation was performed using the metal vapor vacuum arc (Mevva) ion source. Ge ions at mean energies of 70 and 100 keV and with doses ranging from 1×1016 to to 7×1016 ions/cm2 were implanted into Si <100> crystals at room temperature, resulting in the formation of Si1−xGex alloy layers with peak Ge concentrations of 4 to 13 atomic %. Epitaxial regrowth of the amorphous layers was initiated by thermal annealing at temperatures higher than 500°C. The solid phase epitaxy process, the crystal quality, microstructures, interface morphology and defect structures were characterized by ion channeling and transmission electron microscopy. Compositionally graded single crystal Si1−xGex layers with full width at half maximum ∼100nm were formed under a ∼30nm Si layer after annealing at 600°C for 15 min. A high density of defects was found in the layers as well as in the substrate Si just below the original amorphous/crystalline interface. The concentration of these defects was significantly reduced after annealing at 900°C. The kinetics of the regrowth process, the crystalline quality of the alloy layers, the annealing characteristics of the defects, and the strains due to the lattice mismatch between the alloy and the substrate are discussed.

Evidence for the lattice-mismatch-stress-field induced flux pinning in (Gd1 − xYx)BA2Cu3O7 − σ thin films

1996 ◽  
Vol 262 (1-2) ◽  
pp. 81-88 ◽  
Author(s):  
H.H. Wen ◽  
Z.X. Zhao ◽  
R.L. Wang ◽  
H.C. Li ◽  
B. Yin
Keyword(s):  
Thin Films ◽  
Stress Field ◽  
Flux Pinning ◽  
Lattice Mismatch ◽  
Mismatch Stress

Growth and Stability of MgO/NiO Multilayered Films on Single Crystal NiO(100)

1995 ◽  
Vol 401 ◽  
Author(s):  
S. Imaduddin ◽  
R. J. Lad
Keyword(s):  
Thermal Stability ◽  
Chemical Composition ◽  
Chemical Analysis ◽  
Single Crystal ◽  
Lattice Mismatch ◽  
Composition Studies ◽  
Single Crystal Substrate ◽  
Multilayered Films ◽  
Crystal Substrate ◽  
Thermal Stability Of

AbstractThe less than 1% lattice mismatch between MgO and NiO makes them ideal candidates for investigating the growth and stability of multilayered oxide films. Ultra-thin multilayers composed of alternating films of MgO and NiO were deposited onto a stoichiometric NiO(100) single crystal substrate at 250°C by evaporating Mg and Ni in 5×10−7 Torr of O2, respectively. The structure of these multilayers was determined using LEED. Reactivity and chemical composition studies of the MgO/NiO interfaces were carried out using XPS and UPS. The MgO/NiO multilayers grow epitaxially on NiO(100), as evidenced by LEED. XPS and UPS analysis indicates attenuation of the NiO or MgO peaks during growth which is consistent with discrete layering. Chemical analysis also reveals negligible intermixing of the MgO and NiO layers during deposition. Results pertaining to the thermal stability of the multilayers show that UHV annealing above 750°C results in significant diffusion of MgO into the NiO(100) substrate.

Magnetic Domain Patterns on Single-Crystal Iron Whiskers

1957 ◽  
Vol 107 (5) ◽  
pp. 1276-1280 ◽  
Author(s):  
R. V. Coleman ◽  
G. G. Scott
Keyword(s):  
Single Crystal ◽  
Magnetic Domain ◽  
Iron Whiskers
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