scholarly journals Synthesis of bilayer graphene via chemical vapor deposition and its optoelectronic devices

2017 ◽  
Vol 66 (21) ◽  
pp. 218101
Author(s):  
Yang Yun-Chang ◽  
Wu Bin ◽  
Liu Yun-Qi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Bilayer Graphene

scholarly journals Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Electromagnetic Spectrum ◽  
Material System ◽  
Metalorganic Chemical

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

scholarly journals Practical Route for the Low-Temperature Growth of Large-Area Bilayer Graphene on Polycrystalline Nickel by Cold-Wall Chemical Vapor Deposition

ACS Omega ◽  
2021 ◽  
Author(s):  
Muhammad Aniq Shazni Mohammad Haniff ◽  
Nur Hamizah Zainal Ariffin ◽  
Poh Choon Ooi ◽  
Mohd Farhanulhakim Mohd Razip Wee ◽  
Mohd Ambri Mohamed ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Bilayer Graphene ◽  
Cold Wall ◽  
Polycrystalline Nickel ◽  
Large Area ◽  
Temperature Growth ◽  
Low Temperature Growth

scholarly journals InN Quantum Dots by Metalorganic Chemical Vapor Deposition for Optoelectronic Applications

2021 ◽  
Vol 8 ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Recent Work ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Size Control ◽  
Chemical Vapor ◽  
Metalorganic Chemical

This review will cover recent work on InN quantum dots (QDs), specifically focusing on advances in metalorganic chemical vapor deposition (MOCVD) of metal-polar InN QDs for applications in optoelectronic devices. The ability to use InN in optoelectronic devices would expand the nitrides system from current visible and ultraviolet devices into the near infrared. Although there was a significant surge in InN research after the discovery that its bandgap provided potential infrared communication band emission, those studies failed to produce an electroluminescent InN device in part due to difficulties in achieving p-type InN films. Devices utilizing InN QDs, on the other hand, were hampered by the inability to cap the InN without causing intermixing with the capping material. The recent work on InN QDs has proven that it is possible to use capping methods to bury the QDs without significantly affecting their composition or photoluminescence. Herein, we will discuss the current state of metal-polar InN QD growth by MOCVD, focusing on density and size control, composition, relaxation, capping, and photoluminescence. The outstanding challenges which remain to be solved in order to achieve InN infrared devices will be discussed.

Asymmetric Growth of Bilayer Graphene on Copper Enclosures Using Low-Pressure Chemical Vapor Deposition

ACS Nano ◽  
2014 ◽  
Vol 8 (6) ◽  
pp. 6491-6499 ◽  
Author(s):  
Wenjing Fang ◽  
Allen L. Hsu ◽  
Yi Song ◽  
Anthony G. Birdwell ◽  
Matin Amani ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Bilayer Graphene ◽  
Pressure Chemical ◽  
Asymmetric Growth

scholarly journals Direct growth of mm-size twisted bilayer graphene by plasma-enhanced chemical vapor deposition

Carbon ◽  
2020 ◽  
Vol 156 ◽  
pp. 212-224
Author(s):  
Yen-Chun Chen ◽  
Wei-Hsiang Lin ◽  
Wei-Shiuan Tseng ◽  
Chien-Chang Chen ◽  
George.R. Rossman ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Bilayer Graphene ◽  
Direct Growth ◽  
Twisted Bilayer Graphene

scholarly journals 30°-Twisted Bilayer Graphene Quasicrystals from Chemical Vapor Deposition

Nano Letters ◽  
2020 ◽  
Vol 20 (5) ◽  
pp. 3313-3319 ◽  
Author(s):  
Sergio Pezzini ◽  
Vaidotas Mišeikis ◽  
Giulia Piccinini ◽  
Stiven Forti ◽  
Simona Pace ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Bilayer Graphene ◽  
Twisted Bilayer Graphene

Controllable poly-crystalline bilayered and multilayered graphene film growth by reciprocal chemical vapor deposition

Nanoscale ◽  
2015 ◽  
Vol 7 (23) ◽  
pp. 10357-10361 ◽  
Author(s):  
Qinke Wu ◽  
Seong Jun Jung ◽  
Sung Kyu Jang ◽  
Joohyun Lee ◽  
Insu Jeon ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Graphene Film ◽  
Chemical Vapor ◽  
Bilayer Graphene ◽  
Selective Growth ◽  
Layer Graphene

We report the selective growth of multi-layer graphene or a bilayer graphene film by reciprocal chemical vapor deposition.

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