scholarly journals Atomic scale piezoelectricity and giant piezoelectric resistance effect in gallium nitride tunnel junctions under compressive strain

2016 ◽  
Vol 65 (10) ◽  
pp. 107701
Author(s):  
Zhang Geng-Hong ◽  
Zhu Jia ◽  
Jiang Ge-Lei ◽  
Wang Biao ◽  
Zheng Yue
Keyword(s):  
Gallium Nitride ◽  
Tunnel Junctions ◽  
Compressive Strain ◽  
Atomic Scale

scholarly journals Atomic-scale fatigue mechanism of ferroelectric tunnel junctions

2021 ◽  
Vol 7 (48) ◽  
Author(s):  
Yihao Yang ◽  
Ming Wu ◽  
Xingwen Zheng ◽  
Chunyan Zheng ◽  
Jibo Xu ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Atomic Scale ◽  
Fatigue Mechanism

scholarly journals All-MOCVD-grown gallium nitride diodes with ultra-low resistance tunnel junctions

2021 ◽  
Vol 54 (15) ◽  
pp. 155103
Author(s):  
Syed M N Hasan ◽  
Brendan P Gunning ◽  
Zane J.-Eddine ◽  
Hareesh Chandrasekar ◽  
Mary H Crawford ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Tunnel Junctions ◽  
Low Resistance

Gallium Nitride-Based Interband Tunnel Junctions

2017 ◽  
pp. 299-326
Author(s):  
Siddharth Rajan ◽  
Sriram Krishnamoorthy ◽  
Akyol Fatih
Keyword(s):  
Gallium Nitride ◽  
Tunnel Junctions

Reverse Engineering at the Atomic Scale: Competitive Analysis of a Gallium-Nitride-Based Commercial Light-Emitting Diode

2014 ◽  
Vol 22 (5) ◽  
pp. 12-19 ◽  
Author(s):  
A.D. Giddings ◽  
T.J. Prosa ◽  
D. Olson ◽  
P.H. Clifton ◽  
D.J. Larson
Keyword(s):  
Gallium Nitride ◽  
Reverse Engineering ◽  
Competitive Analysis ◽  
Light Emitting Diode ◽  
Atomic Scale ◽  
Light Emitting

Atomic-Scale Structure and Local Chemistry of CoFeB–MgO Magnetic Tunnel Junctions

Nano Letters ◽  
2016 ◽  
Vol 16 (3) ◽  
pp. 1530-1536 ◽  
Author(s):  
Zhongchang Wang ◽  
Mitsuhiro Saito ◽  
Keith P. McKenna ◽  
Shunsuke Fukami ◽  
Hideo Sato ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Scale Structure ◽  
Atomic Scale ◽  
Atomic Scale Structure

Ohmic Contacts to Wurtzite Silicon Carbide Using Polarization Technology

2010 ◽  
Vol 1246 ◽  
Author(s):  
Choudhury Jayant Praharaj
Keyword(s):  
Silicon Carbide ◽  
Gallium Nitride ◽  
Indium Gallium Nitride ◽  
Theoretical Calculations ◽  
Compressive Strain ◽  
Indium Nitride ◽  
Charge Densities ◽  
Sheet Charge ◽  
Indium Gallium ◽  
P Type

AbstractWe present theoretical calculations for ohmic contact technology to wurtzite Silicon Carbide using thin Indium Gallium Nitride and Aluminium Indium Nitride cap layers. Spontaneous and piezoelectric polarization in Indium Gallium Nitride and Aluminium Indium Nitride cap layers gives rise to bound interface sheet charge density of the order of 1013 electrons per cm2, and built-in electric fields of the order of MV per cm. For Si-face p-type SiC, the large compressive strain in very thin InGaN and AlInN cap layers results in negative sheet charge densities and much lower tunneling widths for holes compared to bulk contacts. For C-face p-type SiC, pseudomorphic nitride layers yield no benefit over bulk contacts since positive interface sheet charge densities repel holes and give higher contact resistances. However, thick, relaxed cap layers lead to spontaneous polarization-based negative charge densities that attract holes, leading to lower contact resistances. The contributions of the heavy, light and split-off band holes to the total tunneling flux is taken into account in our calculations. All tunneling probabilities are calculated within the Wentzels-Kramers-Brillouin approximation. The presence of the appropriate cap layers leads to several orders of magnitude improvement in tunneling transmission probabilities, and in many cases, makes ohmic technology to SiC feasible. While the major difficulties are encountered for contacts to p-type SiC, the effect of cap-based polarization technology on contacts to n-type layers is also discussed in this paper. Our calculations have relevance to contact technology for bipolar devices built from wide band-gap wurtzite semiconductors like heterojunction bipolar transistors, light-emitting diodes and lasers.

scholarly journals A comprehensive picture in the view of atomic scale on piezoelectricity of ZnO tunnel junctions: The first principles simulation

AIP Advances ◽  
2016 ◽  
Vol 6 (6) ◽  
pp. 065217 ◽  
Author(s):  
Genghong Zhang ◽  
Weijin Chen ◽  
Jia Zhu ◽  
Gelei Jiang ◽  
Qiang Sheng ◽  
...  
Keyword(s):  
First Principles ◽  
Tunnel Junctions ◽  
Atomic Scale ◽  
Comprehensive Picture
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