scholarly journals Properties of ground state and spectrum of CdSe in different external electric fields

2015 ◽  
Vol 64 (15) ◽  
pp. 153102
Author(s):  
Wu Yong-Gang ◽  
Li Shi-Xiong ◽  
Hao Jin-Xin ◽  
Xu Mei ◽  
Sun Guang-Yu ◽  
...  
2020 ◽  
Vol 69 (10) ◽  
pp. 103101
Author(s):  
Shi-Xiong Li ◽  
De-Liang Chen ◽  
Zheng-Ping Zhang ◽  
Zheng-Wen Long ◽  
Shui-Jie Qin

2017 ◽  
Vol 66 (10) ◽  
pp. 103102
Author(s):  
Li Shi-Xiong ◽  
Zhang Zheng-Ping ◽  
Long Zheng-Wen ◽  
Qin Shui-Jie

2010 ◽  
Vol 19 (11) ◽  
pp. 113101 ◽  
Author(s):  
Guo-Liang Xu ◽  
Xue-Feng Liu ◽  
Hui-Xiang Xie ◽  
Xian-Zhou Zhang ◽  
Yu-Fang Liu

1986 ◽  
Vol 89 ◽  
Author(s):  
Qiang Fu ◽  
A. V. Nurmikko ◽  
L. A. Kolodziejski ◽  
R. L. Gunshor

AbstractApplication of moderate external electric fields to ZnSe/(Zn,Mn)Se superlattices is shown to yield readily measurable spectral shifts of the exciton ground state resonance in the quantum well limit. This shows that confinement effects increase the classical field ionization threshold. At high applied fields and low temperatures, externally injected hot electron excited luminescence from internal excitations of the Mn-ion is observed.


2015 ◽  
Vol 64 (4) ◽  
pp. 043101
Author(s):  
Li Shi-Xiong ◽  
Wu Yong-Gang ◽  
Linghu Rong-Feng ◽  
Sun Guang-Yu ◽  
Zhang Zheng-Ping ◽  
...  

2011 ◽  
Vol 470 ◽  
pp. 60-65 ◽  
Author(s):  
Masahiro Tamura ◽  
Jun Nakamura ◽  
Akiko Natori

Dielectric properties of α-quartz and rutile-GeO2 thin-films are investigated using first-principles ground-state calculations in external electric fields. The optical and the static dielectric constants inside the films have nearly-constant values, corresponding to their bulk values, while only at the topmost surface layer the dielectric constants decrease distinctly. It has been found that the dielectric constant for the rutile-GeO2 is larger than that for the α-quartz one, which stems from the larger ionic character of the Ge-O bond for the rutile phase.


Author(s):  
Johan Sjöblom ◽  
Sameer Mhatre ◽  
Sébastien Simon ◽  
Roar Skartlien ◽  
Geir Sørland

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Zainab Gholami ◽  
Farhad Khoeini

AbstractThe main contribution of this paper is to study the spin caloritronic effects in defected graphene/silicene nanoribbon (GSNR) junctions. Each step-like GSNR is subjected to the ferromagnetic exchange and local external electric fields, and their responses are determined using the nonequilibrium Green’s function (NEGF) approach. To further study the thermoelectric (TE) properties of the GSNRs, three defect arrangements of divacancies (DVs) are also considered for a larger system, and their responses are re-evaluated. The results demonstrate that the defected GSNRs with the DVs can provide an almost perfect thermal spin filtering effect (SFE), and spin switching. A negative differential thermoelectric resistance (NDTR) effect and high spin polarization efficiency (SPE) larger than 99.99% are obtained. The system with the DV defects can show a large spin-dependent Seebeck coefficient, equal to Ss ⁓ 1.2 mV/K, which is relatively large and acceptable. Appropriate thermal and electronic properties of the GSNRs can also be obtained by tuning up the DV orientation in the device region. Accordingly, the step-like GSNRs can be employed to produce high efficiency spin caloritronic devices with various features in practical applications.


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