scholarly journals Molecular dynamics study of ripples in graphene monolayer on silicon surface

2015 ◽  
Vol 64 (1) ◽  
pp. 016804
Author(s):  
Qin Ye-Hong ◽  
Tang Chao ◽  
Zhang Chun-Xiao ◽  
Meng Li-Jun ◽  
Zhong Jian-Xin
Keyword(s):  
Molecular Dynamics ◽  
Silicon Surface ◽  
Graphene Monolayer

Nanoscratching-Induced Phase Tansformation of Monocrystalline Silicon – The Depth-of-Cut Effect

2009 ◽  
Vol 76-78 ◽  
pp. 387-391 ◽  
Author(s):  
Kausala Mylvaganam ◽  
Liang Chi Zhang
Keyword(s):  
Molecular Dynamics ◽  
Phase Transformations ◽  
Amorphous Silicon ◽  
Significant Influence ◽  
Crystalline Phase ◽  
Silicon Surface ◽  
Monocrystalline Silicon ◽  
Depth Of Cut ◽  
Initial Impression ◽  
Dynamics Simulations

This paper explores the effect of the depth-of-cut of an indenter on the phase transformations during nanoscratching on monocrystalline silicon on the Si(100) orientation. The analysis was carried out by molecular dynamics simulations. It was found that the depth-of-cut and the impingement direction of the indenter had a significant influence on the phase transformations in the initial impression region. At a relatively low depth-of-cut, only amorphous silicon was formed on the scratched surface. When the indenter impinged on a silicon surface with an angle, a bct5-Si crystalline phase in the initial impression region would emerge.

Site Balance Models in Plasma Processing: A Comparison to Molecular Dynamics Simulations

1995 ◽  
Vol 389 ◽  
Author(s):  
M.E. Barone ◽  
D.B. Graves
Keyword(s):  
Molecular Dynamics ◽  
Steady State ◽  
Molecular Dynamics Simulations ◽  
Phenomenological Models ◽  
Silicon Surface ◽  
Plasma Processing ◽  
Md Simulations ◽  
Balance Model ◽  
Dynamics Simulations ◽  
A Site

ABSTRACTMolecular dynamics (MD) simulations were conducted of Cl+ impact (at 10, 25 and 50 eV) of an initially bare silicon surface, leading to steady state coverage of Cl in a mixed chlorosilyl layer. Our main goal in this study was to compare the MD predictions to models of ion-assisted etching involving the concept of a site balance. For the case of 50 eV Cl+ etching silicon, the coverage vs. exposure results in the simulation could be reasonably well reproduced in a site balance model, but only if the correct parameters in the model were taken from the simulation. The results of the comparison suggest that MD simulations can be helpful in the development of physically sound phenomenological models of ion-assisted etching.

CF3+ etching silicon surface: A molecular dynamics study

Vacuum ◽  
2012 ◽  
Vol 86 (7) ◽  
pp. 913-916 ◽  
Author(s):  
C. Zhao ◽  
X. Lu ◽  
P. He ◽  
P. Zhang ◽  
W. Sun ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Silicon Surface
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