scholarly journals Study on intrinsic carrier concentration of direct bandgap Ge1-xSnx

2014 ◽  
Vol 63 (23) ◽  
pp. 238502
Author(s):  
Bai Min ◽  
Xuan Rong-Xi ◽  
Song Jian-Jun ◽  
Zhang He-Ming ◽  
Hu Hui-Yong ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Intrinsic Carrier Concentration ◽  
Direct Bandgap

Enhancement of Intrinsic Carrier Concentration in the Active Layer of Solar Cell Using Indium Nitride Quantum Dot

2015 ◽  
Vol 793 ◽  
pp. 435-439 ◽  
Author(s):  
M.A. Humayun ◽  
M.A. Rashid ◽  
F. Malek ◽  
S.B. Yaakob ◽  
A.Z. Abdullah ◽  
...  
Keyword(s):  
Solar Cell ◽  
Quantum Dot ◽  
Carrier Concentration ◽  
Density Of States ◽  
Active Layer ◽  
Cell Structure ◽  
Indium Nitride ◽  
Effective Density ◽  
Intrinsic Carrier Concentration ◽  
Solar Cell Structure

This paper presents the improvement of intrinsic carrier concentrations in the active layer of solar cell structure using Indium Nitride quantum dot as the active layer material. We have analyzed effective density of states in conduction band and valance band of the solar cell numerically using Si, Ge and InN quantum dot in the active layer of the solar cell structure in order to improve the intrinsic carrier concentration within the active layer of the solar cell. Then obtained numerical results were compared. From the comparison results it has been revealed that the application of InN quantum dot in the active layer of the device structure improves the effective density of states both in conduction band and in the valance band. Consiquently the intrinsic carrier concentration has been improved significently by using InN quantum dot in the solart cell structure.

Intrinsic Carrier Concentration in Strained Si1-XGex/(101)Si

2010 ◽  
Vol 663-665 ◽  
pp. 470-472 ◽  
Author(s):  
Jian Jun Song ◽  
He Ming Zhang ◽  
Hui Yong Hu ◽  
Xian Ying Dai ◽  
Rong Xi Xuan
Keyword(s):  
Band Structure ◽  
Carrier Concentration ◽  
Device Physics ◽  
Strained Si ◽  
Intrinsic Carrier Concentration ◽  
Materials Properties ◽  
Densities Of States ◽  
Valence Bands

The intrinsic carrier concentration is the important parameter for researching strained Si1-xGex materials properties and evaluating Si-based strained devices parameters. In this paper, at the beginning of analyzing the band structure of strained Si1-xGex/(101)Si, the dependence of its effective densities of states for the conduction and valence bands (Nc, Nv) and its intrinsic carrier concentration (ni) on Ge fraction (x) and temperature were obtained. The results show that ni increases significantly due to the effect of strain in strained Si1-xGex/(101)Si. Furthermore, Nc and Nv decrease with increasing Ge fraction (x). In addition, it is also found that as the temperature becomes higher, the increase in Nc and Nv occurs. The results can provide valuable references to the understanding on the Si-based strained device physics and its design.

Effect of Anneal Time on Photoelectric Properties of SnS:Ag Thin Films

2010 ◽  
Vol 152-153 ◽  
pp. 752-755 ◽  
Author(s):  
Hong Jie Jia ◽  
Shu Ying Cheng ◽  
Pei Min Lu
Keyword(s):  
Thin Films ◽  
Carrier Concentration ◽  
Annealing Time ◽  
Thermal Evaporation ◽  
Bandgap Energy ◽  
Direct Bandgap ◽  
Glass Substrates ◽  
Vacuum Thermal Evaporation ◽  
Photoelectric Properties ◽  
Anneal Time

SnS and Ag films were deposited on glass substrates by vacuum thermal evaporation successively, and then the thin films were annealed at 260°C in N2 for different times (60min, 120min, 180min) in order to investigate the influence of annealing time on the silver-doped SnS (SnS:Ag) films. The obtained films annealed at different times are polycrystalline SnS with orthogonal structure, and the crystallites in the films are exclusively oriented along the {111} direction. With the increase of annealing time, the uniformity and crystallization of the films are improved, the carrier concentration and mobility of the films first rise and then drop, whereas their resistivity and direct bandgap energy Eg show the contrary trend.

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