scholarly journals Hole quantization and conductivity effective mass of the inversion layer in (001) strained p-channel metal-oxid-semiconductor

2014 ◽  
Vol 63 (23) ◽  
pp. 238501
Author(s):  
Liu Wei-Feng ◽  
Song Jian-Jun
Keyword(s):  
Effective Mass ◽  
Inversion Layer

Effective mass and subband structure of strained Si in a PMOS inversion layer with external stress

2010 ◽  
Vol 518 (6) ◽  
pp. S154-S158 ◽  
Author(s):  
Shu-Tong Chang ◽  
Jacky Huang ◽  
Ming Tang ◽  
Chung-Yi Lin
Keyword(s):  
Effective Mass ◽  
Inversion Layer ◽  
External Stress ◽  
Strained Si ◽  
Subband Structure

Subband Structure and Effective Mass in the Inversion Layer of a Strain Si-Based Alloy P-Type MOSFET

2015 ◽  
Vol 15 (3) ◽  
pp. 2168-2172
Author(s):  
Kuan-Ting Chen ◽  
Jun Wei Fan ◽  
Shu-Tong Chang ◽  
Chung-Yi Lin
Keyword(s):  
Effective Mass ◽  
Inversion Layer ◽  
Subband Structure

Hole confinement and energy subbands in a silicon inversion layer using the effective mass theory

1999 ◽  
Vol 86 (1) ◽  
pp. 438-444 ◽  
Author(s):  
Salvador Rodrı́guez ◽  
Juan A. López-Villanueva ◽  
I. Melchor ◽  
J. E. Carceller
Keyword(s):  
Effective Mass ◽  
Inversion Layer ◽  
Energy Subbands ◽  
Hole Confinement
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