Time domain theory of the electronic transport property of semiconductors measured by means of square-wave-modulated free carrier absorption technique

Zhang Xi-Ren;  Gao Chun-Ming

doi:10.7498/aps.63.137801

Time domain theory of the electronic transport property of semiconductors measured by means of square-wave-modulated free carrier absorption technique

Acta Physica Sinica ◽

10.7498/aps.63.137801 ◽

2014 ◽

Vol 63 (13) ◽

pp. 137801

Author(s):

Zhang Xi-Ren ◽

Gao Chun-Ming

Keyword(s):

Transport Property ◽

Time Domain ◽

Electronic Transport ◽

Free Carrier ◽

Domain Theory ◽

Free Carrier Absorption ◽

Electronic Transport Property ◽

Square Wave ◽

Carrier Absorption ◽

Absorption Technique

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Measurement of electronic transport property of semiconductors by three-dimensional modulated free carrier absorption technique

Acta Physica Sinica ◽

10.7498/aps.57.7310 ◽

2008 ◽

Vol 57 (11) ◽

pp. 7310

Author(s):

Zhang Xi-Ren ◽

Li Bin-Cheng ◽

Liu Xian-Ming

Keyword(s):

Transport Property ◽

Electronic Transport ◽

Three Dimensional ◽

Free Carrier ◽

Free Carrier Absorption ◽

Electronic Transport Property ◽

Carrier Absorption ◽

Absorption Technique

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Electronic transport characterization of silicon wafers by combination of modulated free carrier absorption and photocarrier radiometry

Journal of Applied Physics ◽

10.1063/1.3536620 ◽

2011 ◽

Vol 109 (2) ◽

pp. 023708 ◽

Cited By ~ 9

Author(s):

Qiuping Huang ◽

Bincheng Li

Keyword(s):

Electronic Transport ◽

Free Carrier ◽

Silicon Wafers ◽

Free Carrier Absorption ◽

Photocarrier Radiometry ◽

Carrier Absorption

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Electronic transport characterization of silicon wafers by laterally resolved free-carrier absorption and multiparameter fitting

Applied Physics Letters ◽

10.1063/1.2354006 ◽

2006 ◽

Vol 89 (11) ◽

pp. 112120 ◽

Cited By ~ 25

Author(s):

Xiren Zhang ◽

Bincheng Li ◽

Chunming Gao

Keyword(s):

Electronic Transport ◽

Free Carrier ◽

Silicon Wafers ◽

Free Carrier Absorption ◽

Carrier Absorption

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Characterization of 4H-SiC Band-Edge Absorption Properties by Free-Carrier Absorption Technique with a Variable Excitation Spectrum

Materials Science Forum ◽

10.4028/www.scientific.net/msf.389-393.617 ◽

2002 ◽

Vol 389-393 ◽

pp. 617-620 ◽

Cited By ~ 4

Author(s):

Paulius Grivickas ◽

Vytautas Grivickas ◽

Augustinas Galeckas ◽

Jan Linnros

Keyword(s):

Excitation Spectrum ◽

Free Carrier ◽

Band Edge ◽

Free Carrier Absorption ◽

Absorption Properties ◽

Edge Absorption ◽

Carrier Absorption ◽

Absorption Technique

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Analysis of modulated free-carrier absorption measurement of electronic transport properties of silicon wafers

Journal of Physics Conference Series ◽

10.1088/1742-6596/214/1/012116 ◽

2010 ◽

Vol 214 ◽

pp. 012116 ◽

Cited By ~ 1

Author(s):

Wei Li ◽

Bincheng Li

Keyword(s):

Transport Properties ◽

Electronic Transport ◽

Free Carrier ◽

Silicon Wafers ◽

Absorption Measurement ◽

Free Carrier Absorption ◽

Electronic Transport Properties ◽

Carrier Absorption

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Time-domain modulated free-carrier absorption measurements of recombination process in silicon wafers

The European Physical Journal Special Topics ◽

10.1140/epjst/e2008-00444-2 ◽

2008 ◽

Vol 153 (1) ◽

pp. 275-277

Author(s):

C. Gao ◽

B. Li ◽

X. Zhang

Keyword(s):

Time Domain ◽

Free Carrier ◽

Silicon Wafers ◽

Recombination Process ◽

Free Carrier Absorption ◽

Carrier Absorption ◽

Absorption Measurements

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Sensitivity analysis of laterally resolved free carrier absorption determination of electronic transport properties of silicon wafers

Journal of Applied Physics ◽

10.1063/1.2840061 ◽

2008 ◽

Vol 103 (3) ◽

pp. 033709 ◽

Cited By ~ 9

Author(s):

Xiren Zhang ◽

Bincheng Li ◽

Chunming Gao

Keyword(s):

Sensitivity Analysis ◽

Transport Properties ◽

Electronic Transport ◽

Free Carrier ◽

Silicon Wafers ◽

Free Carrier Absorption ◽

Electronic Transport Properties ◽

Absorption Determination ◽

Carrier Absorption

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Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers

Journal of Applied Physics ◽

10.1063/1.4852417 ◽

2013 ◽

Vol 114 (24) ◽

pp. 243702 ◽

Cited By ~ 2

Author(s):

Shengdong Ren ◽

Bincheng Li ◽

Qiuping Huang

Keyword(s):

Time Domain ◽

Three Dimensional ◽

Free Carrier ◽

Silicon Wafers ◽

Absorption Measurement ◽

Free Carrier Absorption ◽

Transient Model ◽

Carrier Absorption

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Analysis of free carrier absorption measurement of electronic transport properties of silicon wafers

The European Physical Journal Special Topics ◽

10.1140/epjst/e2008-00445-1 ◽

2008 ◽

Vol 153 (1) ◽

pp. 279-281 ◽

Cited By ~ 3

Author(s):

X. Zhang ◽

B. Li ◽

C. Gao

Keyword(s):

Transport Properties ◽

Electronic Transport ◽

Free Carrier ◽

Silicon Wafers ◽

Absorption Measurement ◽

Free Carrier Absorption ◽

Electronic Transport Properties ◽

Carrier Absorption

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Measurement accuracy analysis of the free carrier absorption determination of the electronic transport properties of silicon wafers

Chinese Physics B ◽

10.1088/1674-1056/20/6/068105 ◽

2011 ◽

Vol 20 (6) ◽

pp. 068105 ◽

Cited By ~ 2

Author(s):

Xi-Ren Zhang ◽

Chun-Ming Gao ◽

Ying Zhou ◽

Zhan-Ping Wang

Keyword(s):

Transport Properties ◽

Electronic Transport ◽

Measurement Accuracy ◽

Free Carrier ◽

Silicon Wafers ◽

Free Carrier Absorption ◽

Accuracy Analysis ◽

Absorption Determination ◽

Carrier Absorption

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