scholarly journals Strain effect on the morphological instability of a circular island in heteroepitaxy

2013 ◽  
Vol 62 (23) ◽  
pp. 238102
Author(s):  
Wang Jing ◽  
Feng Lu ◽  
Hao Yi ◽  
Zhao Yang ◽  
Chen Zhen-Fei
Keyword(s):  
Strain Effect ◽  
Morphological Instability ◽  
Circular Island

Electrodeposition of Strained-Layer Superlattices

1996 ◽  
Vol 451 ◽  
Author(s):  
T. P. Moffat
Keyword(s):  
Charge Transfer ◽  
Mass Transport ◽  
Structural Evolution ◽  
Iron Group ◽  
Morphological Instability ◽  
Group Metal ◽  
Iron Group Metal ◽  
Transport Control ◽  
Strained Layer Superlattices ◽  
Interfacial Charge

ABSTRACTA variety of Cu/(Ni, Co) multilayers have been grown on Cu single crystals by pulse plating from an alloy electroplating bath. Copper is deposited under mass transport control while the iron group metal is deposited under interfacial charge transfer control. The structural evolution of these films is influenced by the morphological instability of the mass transport limited copper deposition reaction and the development of growth twins during iron-group metal deposition. Specular films have been obtained for growth on Cu(100) while rough, defective films were typically obtained for growth on Cu(111) and Cu(110).

Effects of Fetus Weight, Dam Strain, Dam Weight, and Litter Size on the Craniofacial Morphogenesis of CL/Fr Mouse Fetuses Affected with Cleft Lip and Palate

1997 ◽  
Vol 34 (4) ◽  
pp. 325-330 ◽  
Author(s):  
Kazuaki Nonaka ◽  
Yasunori Sasaki ◽  
Yoshihisa Watanabe ◽  
Ken-ichi Yanagita ◽  
Minoru Nakata
Keyword(s):  
Litter Size ◽  
Cleft Lip ◽  
Cleft Lip And Palate ◽  
Craniofacial Morphology ◽  
Strain Effect ◽  
Craniofacial Growth ◽  
Lateral Cephalogram ◽  
Mouse Fetus ◽  
Mouse Fetuses ◽  
Craniofacial Morphogenesis

Objective: This study examined the factors related to the morphogenesis of the craniofacial complex of the CL/Fr mouse fetus affected with CLP based on the findings of a lateral cephalogram. Design: Embryo transfer experiments were performed to determine the effect of the fetus weight, dam strain, dam weight, and litter size on the intra-uterine craniofacial morphogenesis of CL/Fr mouse fetuses. On the 18th gestational day, each pregnant dam that had received CL/Fr mouse embryos was laparotomized to remove the transferred fetuses that had developed in the uteri of the cleft lip and palate (CLP)-susceptible CL/Fr strain dam and the CLP-resistant C57BL strain dam. A cephalometric observation of the craniofacial morphology of each fetus was subsequently performed. Results: Based on a multiple regression analysis, the standardized partial regression coefficients of the affected fetus weight, the dam weight, and the litter size on the maxillary size of the affected CL/Fr fetus were 0.71 (p < .01), 0.03, and −0.07. According to a least-squares analysis of variance, the dam strain effect in addition to the effect of the affected fetus weight on the maxillary size and the cranial size of the affected fetuses was significant (p < .01 for cranial size, p < .05 for maxillary size) and close to a significant level (p = .09) for the mandibular size of the affected fetuses. The adjusted maxillary size and cranial size after statistically eliminating the effects of the affected fetus weight, dam weight, and lifter size on each original craniofacial size of the affected fetuses that had developed in the CL/Er dam strain were also significantly smaller than those of the affected fetuses that had developed in the C57BL dam strain. Conclusions: The present results indicate that the craniofacial growth of the CL/Fr mouse fetus affected with CLP increased in proportion to the fetus weight. The dam strain effect, in addition to the effect of the affected fetus weight, could thus not be ignored when the etiology of the spontaneous CLP was examined, while the uterine environment, provided by the CL/Fr strain dam, retarded the intra-uterine craniofacial growth of the affected fetuses. It was therefore concluded that the dam strain effect, as well as the effect of the affected fetus weight, both play an important role on the craniofacial morphogenesis of the CL/Fr strain of the affected fetuses that developed in both strain dams.

MORPHOLOGICAL INSTABILITY OF γ' PHASE IN NICKEL-BASED POWDER METALLURGY SUPERALLOYS

2012 ◽  
Vol 48 (3) ◽  
pp. 257 ◽  
Author(s):  
Benfu HU ◽  
Guoquan LIU ◽  
Kai WU ◽  
Gaofeng TIAN
Keyword(s):  
Powder Metallurgy ◽  
Morphological Instability

Comparative study of electron transfer on various graphene-metallic contacts

2019 ◽  
Vol 33 (31) ◽  
pp. 1950384
Author(s):  
Di Lu ◽  
Yu-E Yang ◽  
Weichun Zhang ◽  
Caixia Wang ◽  
Jining Fang ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Single Layer ◽  
Annealing Treatment ◽  
Single Layer Graphene ◽  
Strain Effect ◽  
Graphene Surface ◽  
Layer Graphene ◽  
Metallic Contacts ◽  
Nonuniform Strain ◽  
Main Factor

We have investigated Raman spectra of the G and 2D lines of a single-layer graphene (SLG) with metallic contacts. The shift of the G and 2D lines is correlated to two different factors. Before performing annealing treatment or annealing under low temperature, the electron transfer on graphene surface is dominated by nonuniform strain effect. As the annealing treatment is enhanced, however, a suitable annealing treatment can eliminate the nonuniform strain effect where the relative work function (WF) between graphene and metal becomes a main factor to determine electronic transfer. Moreover, it is confirmed that the optimized annealing treatment can also decrease effectively the structural defect and induced disorder in graphene due to metallic contacts.

A Novel High-Stress Pre-Metal Dielectric Film to Improve Device Performance for sub-65nm CMOS Manufacturing

2006 ◽  
Vol 913 ◽  
Author(s):  
Young Way Teh ◽  
John Sudijono ◽  
Alok Jain ◽  
Shankar Venkataraman ◽  
Sunder Thirupapuliyur ◽  
...  
Keyword(s):  
Performance Improvement ◽  
Dielectric Film ◽  
High Stress ◽  
Significant Degree ◽  
Strain Effect ◽  
Device Performance ◽  
Hot Carrier ◽  
Tcad Simulation ◽  
Improve Device ◽  
Deposition Techniques

AbstractThis work focuses on the development and physical characteristics of a novel dielectric film for a pre-metal dielectric (PMD) application which induces a significant degree of tensile stress in the channel of a sub-65nm node CMOS structure. The film can be deposited at low temperatures to meet the requirements of NiSi integration while maintaining void-free gap fill and superior film quality such as moisture content and uniformity. A manufacturable and highly reliable oxide film has been demonstrated through both TCAD simulation and real device data, showing ~6% NMOS Ion-Ioff improvement; no Ion-Ioff improvement or degradation on PMOS. A new concept has been proposed to explain the PMD strain effect on device performance improvement. Improvement in Hot Carrier immunity is observed compared to similar existing technologies using high density plasma (HDP) deposition techniques.

scholarly journals Optoelectronic Properties of Ultrathin Indium Tin Oxide Films: A First-Principle Study

Crystals ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 30
Author(s):  
Xiaoyan Liu ◽  
Lei Wang ◽  
Yi Tong
Keyword(s):  
Film Thickness ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Density Functional ◽  
Optoelectronic Properties ◽  
Surface Strain ◽  
Strain Effect ◽  
First Principle ◽  
Electrical Resistivities ◽  
Ito Films

First-principle density functional theory simulations have been performed to predict the electronic structures and optoelectronic properties of ultrathin indium tin oxide (ITO) films, having different thicknesses and temperatures. Our results and analysis led us to predict that the physical properties of ultrathin films of ITO have a direct relation with film thickness rather than temperature. Moreover, we found that a thin film of ITO (1 nm thickness) has a larger absorption coefficient, lower reflectivity, and higher transmittance in the visible light region compared with that of 2 and 3 nm thick ITO films. We suggest that this might be due to the stronger surface strain effect in 1 nm thick ITO film. On the other hand, all three thin films produce similar optical spectra. Finally, excellent agreement was found between the calculated electrical resistivities of the ultrathin film of ITO and that of its experimental data. It is concluded that the electrical resistivities reduce along with the increase in film thickness of ITO because of the short strain length and limited bandgap distributions.

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