scholarly journals Investigations on radiative opacity measurement by the method of direct laser-heating and self-backlighting

2013 ◽  
Vol 62 (19) ◽  
pp. 195201
Author(s):  
Zhang Ji-Yan ◽  
Yang Jia-Min ◽  
Yang Guo-Hong ◽  
Ding Yao-Nan ◽  
Li Jun ◽  
...  
2019 ◽  
Vol 26 (4) ◽  
pp. 1245-1252 ◽  
Author(s):  
Daniel Sneed ◽  
John S. C. Kearney ◽  
Dean Smith ◽  
Jesse S. Smith ◽  
Changyong Park ◽  
...  

The transparent conducting oxide, SnO2, is a promising optoelectronic material with predicted tailorable properties via pressure-mediated band gap opening. While such electronic properties are typically modeled assuming perfect crystallinity, disordering of the O sublattice under pressure is qualitatively known. Here a quantitative approach is thus employed, combining extended X-ray absorption fine-structure (EXAFS) spectroscopy with X-ray diffraction, to probe the extent of Sn—O bond anharmonicities in the high-pressure cubic (Pa\bar{3}) SnO2 – formed as a single phase and annealed by CO2 laser heating to 2648 ± 41 K at 44.5 GPa. This combinational study reveals and quantifies a large degree of disordering in the O sublattice, while the Sn lattice remains ordered. Moreover, this study describes implementation of direct laser heating of non-metallic samples by CO2 laser alongside EXAFS, and the high quality of data which may be achieved at high pressures in a diamond anvil cell when appropriate thermal annealing is applied.


2007 ◽  
Vol 76 (1) ◽  
Author(s):  
M. J. Lipp ◽  
J. Park Klepeis ◽  
B. J. Baer ◽  
H. Cynn ◽  
W. J. Evans ◽  
...  

2022 ◽  
Author(s):  
Qi Zheng ◽  
Rong Yang ◽  
Kang Wu ◽  
Xiao Lin ◽  
Shixuan Du ◽  
...  

Abstract We report a facile phase conversion method that can locally convert n-type SnSe2 into p-type SnSe by direct laser irradiation. Raman spectra of SnSe2 flakes before and after laser irradiation confirm the phase conversion of SnSe2 to SnSe. By performing the laser irradiation on SnSe2 flakes at different temperatures, it is found that laser heating effect induces the removal of Se atoms from SnSe2 and results in the phase conversion of SnSe2 to SnSe. Lattice-revolved transmission electron microscope images of SnSe2 flakes before and after laser irradiation further confirm such conversion. By selective laser irradiation on SnSe2 flakes, a pattern with SnSe2/SnSe heteostructures is created. This indicates that the laser induced phase conversion technique has relatively high spatial resolution and enables the creation of micron-sized in-plane p-n junction at predefined region.


Author(s):  
Nicholas E. Capps ◽  
Jonathan T. Goldstein ◽  
Katharina Rettschlag ◽  
Khodor Sleiman ◽  
Peter Jaeschke ◽  
...  

Author(s):  
V. N. Tokarev ◽  
V. A. Shmakov ◽  
V. A. Yamschikov ◽  
R. R. Khasaya ◽  
S. I. Mikolutskiy ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document