The instantaneous linewidth measurement of DFB laser with ultrashort delay

An Ying;  Du Zhen-Hui;  Xu Ke-Xin

doi:10.7498/aps.62.174208

The instantaneous linewidth measurement of DFB laser with ultrashort delay

Acta Physica Sinica ◽

10.7498/aps.62.174208 ◽

2013 ◽

Vol 62 (17) ◽

pp. 174208

Author(s):

An Ying ◽

Du Zhen-Hui ◽

Xu Ke-Xin

Keyword(s):

Dfb Laser ◽

Linewidth Measurement

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Comparison of DFB laser linewidth measurement techniques: results from COST 215 round robin

Electronics Letters ◽

10.1049/el:19901304 ◽

1990 ◽

Vol 26 (24) ◽

pp. 2018 ◽

Cited By ~ 13

Author(s):

M.O. van Deventer ◽

P. Spano ◽

S.K. Nielsen

Keyword(s):

Measurement Techniques ◽

Round Robin ◽

Laser Linewidth ◽

Dfb Laser ◽

Linewidth Measurement

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Linewidth measurement using the low voltage SEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100144681 ◽

1986 ◽

Vol 44 ◽

pp. 652-653

Author(s):

M.G. Rosenfield

Keyword(s):

Electron Microscope ◽

Scanning Electron Microscope ◽

Integrated Circuits ◽

Secondary Electron ◽

Low Voltage ◽

Fabrication Process ◽

Critical Dimensions ◽

Linewidth Measurement ◽

Threshold Technique ◽

Scanning Electron

Minimum feature sizes in experimental integrated circuits are approaching 0.5 μm and below. During the fabrication process it is usually necessary to be able to non-destructively measure the critical dimensions in resist and after the various process steps. This can be accomplished using the low voltage SEM. Submicron linewidth measurement is typically done by manually measuring the SEM micrographs. Since it is desirable to make as many measurements as possible in the shortest period of time, it is important that this technique be automated.Linewidth measurement using the scanning electron microscope is not well understood. The basic intent is to measure the size of a structure from the secondary electron signal generated by that structure. Thus, it is important to understand how the actual dimension of the line being measured relates to the secondary electron signal. Since different features generate different signals, the same method of relating linewidth to signal cannot be used. For example, the peak to peak method may be used to accurately measure the linewidth of an isolated resist line; but, a threshold technique may be required for an isolated space in resist.

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