Paper presents the influence of thermal treatment on structural and optical characteristics of Sb0.5ZnTe thin film. Alloy of Sb0.5ZnTe has been prepared through traditional and economical melt quenching technique and thin films of prepared alloy was deposited onto
glass substrate by thermal evaporation method at pressure of 10–6 Torr. The antimony doped films were annealed for 2 h at three different temperatures ranges (373 K, 393 K and 413 K). Structural characterization of as prepared and annealed film was done by XRD technique and
it was found that annealing improves the film crystal structure. UV-Vis spectrophotometer facilitates optical analysis of Sb0.5ZnTe film in wavelength range of 400–1000 nm. It was observed that band gap Eg of the Sb doped film increased while absorption coefficient
(α) decrease with increase in heating temperature. These changes in optical properties were explained in terms of defect states.
Electrical, optical properties and structure characterization of In-doped copper nitride thin film