scholarly journals A study of two-dimensional hexagonal phase array grating in MgO:LN based on the Talbot effect

2013 ◽  
Vol 62 (9) ◽  
pp. 094216
Author(s):  
Fan Tian-Wei ◽  
Chen Yun-Lin ◽  
Zhang Jin-Hong
Keyword(s):  
Hexagonal Phase ◽  
Phase Array ◽  
Two Dimensional ◽  
Talbot Effect

scholarly journals Tunable two-dimensional hexagonal phase array in domain-engineered Z-cut lithium niobate crystal

2006 ◽  
Vol 31 (21) ◽  
pp. 3164 ◽  
Author(s):  
M. Paturzo ◽  
P. De Natale ◽  
S. De Nicola ◽  
P. Ferraro ◽  
S. Mailis ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Lithium Niobate Crystal ◽  
Hexagonal Phase ◽  
Phase Array ◽  
Two Dimensional

scholarly journals Fabrication of Ultrathin MoS2 Nanosheets and Application on Adsorption of Organic Pollutants and Heavy Metals

Processes ◽  
2020 ◽  
Vol 8 (5) ◽  
pp. 504 ◽  
Author(s):  
Siyi Huang ◽  
Ziyun You ◽  
Yanting Jiang ◽  
Fuxiang Zhang ◽  
Kaiyang Liu ◽  
...  
Keyword(s):  
Heavy Metals ◽  
Electrostatic Interactions ◽  
Large Scale ◽  
Layer Structure ◽  
Structural Characteristics ◽  
Hexagonal Phase ◽  
Two Dimensional ◽  
Mos2 Nanosheets ◽  
Hybrid Strategy ◽  
Ultrathin Mos2 Nanosheets

Owing to their peculiar structural characteristics and potential applications in various fields, the ultrathin MoS2 nanosheets, a typical two-dimensional material, have attracted numerous attentions. In this paper, a hybrid strategy with combination of quenching process and liquid-based exfoliation was employed to fabricate the ultrathin MoS2 nanosheets (MoS2 NS). The obtained MoS2 NS still maintained hexagonal phase (2H-MoS2) and exhibited evident thin layer-structure (1–2 layers) with inconspicuous wrinkle. Besides, the MoS2 NS dispersion showed excellent stability (over 60 days) and high concentration (0.65 ± 0.04 mg mL−1). The MoS2 NS dispersion also displayed evident optical properties, with two characteristic peaks at 615 and 670 nm, and could be quantitatively analyzed with the absorbance at 615 nm in the range of 0.01–0.5 mg mL−1. The adsorption experiments showed that the as-prepared MoS2 NS also exhibited remarkable adsorption performance on the dyes (344.8 and 123.5 mg g−1 of qm for methylene blue and methyl orange, respectively) and heavy metals (185.2, 169.5, and 70.4 mg g−1 of qm for Cd2+, Cu2+, and Ag+). During the adsorption, the main adsorption mechanisms involved the synergism of physical hole-filling effects and electrostatic interactions. This work provided an effective way for the large-scale fabrication of the two-dimensional nanosheets of transition metal dichalcogenides (TMDs) by liquid exfoliation.

scholarly journals A First-Principles Study of Nonlinear Elastic Behavior and Anisotropic Electronic Properties of Two-Dimensional HfS2

Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 446
Author(s):  
Mahdi Faghihnasiri ◽  
Aidin Ahmadi ◽  
Samaneh Alvankar Golpayegan ◽  
Saeideh Garosi Sharifabadi ◽  
Ali Ramazani
Keyword(s):  
Electronic Properties ◽  
First Principles ◽  
Electronic Band Structure ◽  
Hexagonal Phase ◽  
Strain Engineering ◽  
Elastic Behavior ◽  
Potential Candidate ◽  
Two Dimensional ◽  
Electronic Band ◽  
Wide Range

We utilize first principles calculations to investigate the mechanical properties and strain-dependent electronic band structure of the hexagonal phase of two dimensional (2D) HfS2. We apply three different deformation modes within −10% to 30% range of two uniaxial (D1, D2) and one biaxial (D3) strains along x, y, and x-y directions, respectively. The harmonic regions are identified in each deformation mode. The ultimate stress for D1, D2, and D3 deformations is obtained as 0.037, 0.038 and 0.044 (eV/Ang3), respectively. Additionally, the ultimate strain for D1, D2, and D3 deformation is obtained as 17.2, 17.51, and 21.17 (eV/Ang3), respectively. In the next step, we determine the second-, third-, and fourth-order elastic constants and the electronic properties of both unstrained and strained HfS2 monolayers are investigated. Our findings reveal that the unstrained HfS2 monolayer is a semiconductor with an indirect bandgap of 1.12 eV. We then tune the bandgap of HfS2 with strain engineering. Our findings reveal how to tune and control the electronic properties of HfS2 monolayer with strain engineering, and make it a potential candidate for a wide range of applications including photovoltaics, electronics and optoelectronics.

Reconfigurable two-dimensional diffractive phase element with the fractional Talbot effect

1998 ◽  
Vol 37 (20) ◽  
pp. 4337 ◽  
Author(s):  
Renaud Moignard ◽  
Jean-Louis de Bougrenet de la Tocnaye
Keyword(s):  
Two Dimensional ◽  
Talbot Effect ◽  
Diffractive Phase Element

scholarly journals Discrete Talbot effect in two-dimensional waveguide arrays

2015 ◽  
Vol 23 (11) ◽  
pp. 14724 ◽  
Author(s):  
Zhenhua Chen ◽  
Yong Zhang ◽  
Min Xiao
Keyword(s):  
Two Dimensional ◽  
Talbot Effect ◽  
Waveguide Arrays

PHASE DIAGRAMS OF CHOLESTERICS IN APPLIED FIELDS : THE TWO-DIMENSIONAL HEXAGONAL PHASE

1985 ◽  
Vol 46 (C3) ◽  
pp. C3-47-C3-60 ◽  
Author(s):  
R. M. Hornreich ◽  
M. Kugler ◽  
S. Shtrikman
Keyword(s):  
Phase Diagrams ◽  
Hexagonal Phase ◽  
Two Dimensional ◽  
Applied Fields
Sign in / Sign up

Export Citation Format

Share Document