scholarly journals Low-threshold electrically pumped ultraviolet random lasing from ZnO film prepared by pulsed laser deposition

2013 ◽  
Vol 62 (8) ◽  
pp. 084207
Author(s):  
Xu Yun ◽  
Li Yun-Peng ◽  
Jin Lu ◽  
Ma Xiang-Yang ◽  
Yang De-Ren
1998 ◽  
Vol 127-129 ◽  
pp. 496-499 ◽  
Author(s):  
Y.R. Ryu ◽  
S. Zhu ◽  
S.W. Han ◽  
H.W. White ◽  
P.F. Miceli ◽  
...  

2002 ◽  
Vol 197-198 ◽  
pp. 368-370 ◽  
Author(s):  
Yoshiki Nakata ◽  
Tatsuo Okada ◽  
Mitsuo Maeda

2005 ◽  
Vol 484 (1-2) ◽  
pp. 174-183 ◽  
Author(s):  
Manoj Kumar ◽  
R.M. Mehra ◽  
Akihiro Wakahara ◽  
M. Ishida ◽  
Akira Yoshida

Author(s):  
Jae-wan Choi ◽  
Hyun-jin Ji ◽  
Chang-Uk Jung ◽  
Bo-Hwa Lee ◽  
Gyu-Tae Kim

2007 ◽  
Vol 21 (10) ◽  
pp. 1775-1785 ◽  
Author(s):  
XIAN-QI WEI ◽  
BAO-YUAN MAN ◽  
YU-TAI WANG ◽  
HUI-ZHAO ZHUANG

Zinc oxide (ZnO) thin films grown on Si (111) substrates by pulsed laser deposition at O 2 ambient pressure of 1.3 Pa at different deposition temperatures have been studied. ZnO thin films underwent annealing treatment after deposition. The structural and optoelectronic properties of deposited and annealed thin films have been characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), infrared absorption (IR) spectra, four-probe measurements and photoluminescence (PL) spectra. The XRD observation shows that the best crystalline quality of ZnO thin films with hexagonal structure are those grown at a temperature of 400°C and annealed at a temperature of 600°C, respectively. AFM results show that the surface roughness of the ZnO films can be decreased with increasing annealing temperature up to 600°C and then increased by further increasing the annealing temperature. The intense absorption peak sited at 417.54 cm-1 has been observed by IR spectra for ZnO film grown at 400°C and annealed at 600°C, and the property of absorption is improved by post-annealing. ZnO film grown at 400°C with a resistivity of 12.3 Ω· cm shows the best n-type semiconductor property. The PL spectra show the dominant increase in UV emission by annealing. It is concluded that the best post-annealing temperature is about 600°C.


2015 ◽  
Vol 336 ◽  
pp. 103-107 ◽  
Author(s):  
C. Cachoncinlle ◽  
C. Hebert ◽  
J. Perrière ◽  
M. Nistor ◽  
A. Petit ◽  
...  

2010 ◽  
Vol 256 (14) ◽  
pp. 4682-4686 ◽  
Author(s):  
Xiangyun Han ◽  
Jiangnan Dai ◽  
Chenhui Yu ◽  
Zhihao Wu ◽  
Changqing Chen ◽  
...  

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