scholarly journals Lattice constant deviation from Vegard's law in GeSn alloys

2012 ◽  
Vol 61 (17) ◽  
pp. 176104
Author(s):  
Su Shao-Jian ◽  
Cheng Bu-Wen ◽  
Xue Chun-Lai ◽  
Zhang Dong-Liang ◽  
Zhang Guang-Ze ◽  
...  
Keyword(s):  
Lattice Constant ◽  
Vegard’S Law ◽  
Constant Deviation

scholarly journals Two-dimensional Gaussian fitting for precise measurement of lattice constant deviation from a selected-area diffraction map

Microscopy ◽  
2017 ◽  
Vol 67 (suppl_1) ◽  
pp. i142-i149 ◽  
Author(s):  
Raman Bekarevich ◽  
Kazutaka Mitsuishi ◽  
Tsuyoshi Ohnishi ◽  
Fumihiko Uesugi ◽  
Masaki Takeguchi ◽  
...  
Keyword(s):  
Lattice Constant ◽  
Precise Measurement ◽  
Two Dimensional ◽  
Gaussian Fitting ◽  
Constant Deviation

Nanocrystalline Solid Solutions of Cu/Co and Other Novel Nanomaterials

1996 ◽  
Vol 457 ◽  
Author(s):  
A. S. Edelstein ◽  
V. G. Harris ◽  
D. Rolison ◽  
J. H. Perepezko ◽  
D. Smith
Keyword(s):  
Heat Treatment ◽  
Lattice Constant ◽  
Solid Solutions ◽  
Nearest Neighbor ◽  
Neighbor Distance ◽  
X Ray Diffraction ◽  
X Ray ◽  
Vegard’S Law ◽  
Minimum Heat ◽  
Special Case

ABSTRACTA brief review will be given of the preparation, synthesis and properties of the Cu/Co system. The special case of the synthesis of nanocrystalline Cu.80Co.20 by precipitation and reduction of hydroxides is discussed in more detail. It was found that the lattice constant of nanocrystalline Cu.80Co.20. determined from x-ray diffraction measurements, approximately fits Vegard's Law and the average nearest neighbor distance from both the Cu and Co atoms, determined from EXAFS measurements, ir shifted from their bulk values. Samples given the minimum heat treatment needed to reduce the hydroxides contained Co-rich regions. Heat treatments cause the Co to segregate preferentially onto the surface of the Cu crystals. The presence of the Co delays the oxidation of the Cu surfaces.

Influence of The Local Microstructure on The Macroscopic Properties of Si1–x–yGexCy, Alloys

1997 ◽  
Vol 469 ◽  
Author(s):  
W. Windl ◽  
J. D. Kress ◽  
A. F. Voter ◽  
J. Menéndez ◽  
O. F. Sankey
Keyword(s):  
Lattice Constant ◽  
First Principles ◽  
Density Functional ◽  
Theoretical Study ◽  
Growth Conditions ◽  
Layer By Layer ◽  
First Principles Calculations ◽  
Functional Formalism ◽  
Vegard’S Law ◽  
Dilute Limit

ABSTRACTWe performed a theoretical study of the microscopic arrangement of the C atoms in Si1–x–yGexCy, alloys using the Sankey local-orbital density-functional formalism. Our first-principles calculations show that in the dilute limit, the lattice constant in Si1–yCy, alloys decreases much more (by about 2/3) with concentration than predicted by Vegard's law. We show thatthis result is consistent with Raman and infrared experiments and with previous empiricalcalculations. As the C concentration increases, the interactions between the C atoms become important: Interstitial C becomes more abundant and increases the lattice constant, and the substitutional C atoms array under appropriate growth conditions. The effect of this ordering on the lattice constant is small, but it can be seen in the Raman spectra of layer-by-layer grown samples.

scholarly journals Ab-initio study of structural, elastic, electronic and thermodynamic properties of BaxSr1−xS ternary alloys

2015 ◽  
Vol 33 (4) ◽  
pp. 879-886 ◽  
Author(s):  
S. Chelli ◽  
S. Touam ◽  
L. Hamioud ◽  
H. Meradji ◽  
S. Ghemid ◽  
...  
Keyword(s):  
Thermodynamic Properties ◽  
Bulk Modulus ◽  
Lattice Constant ◽  
Theoretical Data ◽  
Calculated Phase Diagram ◽  
Enthalpy Of Mixing ◽  
Ternary Alloys ◽  
Miscibility Gap ◽  
Full Potential ◽  
Vegard’S Law

AbstractThe structural, elastic, electronic and thermodynamic properties of BaxSr1−xS ternary alloys have been investigated using the full-potential (linearized) augmented plane wave method. The ground state properties, such as lattice constant, bulk modulus and elastic constants, are in good agreement with numerous experimental and theoretical data. The dependence of the lattice parameters, bulk modulus and band gap on the composition x was analyzed. Deviation of the lattice constant from Vegard’s law and the bulk modulus from linear concentration dependence (LCD) was observed. The microscopic origins of the gap bowing were explained by using the approach of Zunger et al. The thermodynamic stability of BaxSr1−xS alloy was investigated by calculating the excess enthalpy of mixing, ΔHm and the calculated phase diagram showed a broad miscibility gap with a critical temperature.

Vegard's law deviation in lattice constant and band gap bowing parameter of zincblende InxGa1−xN

2004 ◽  
Vol 237 (4-6) ◽  
pp. 363-369 ◽  
Author(s):  
Yen-Kuang Kuo ◽  
Bo-Ting Liou ◽  
Sheng-Horng Yen ◽  
Han-Yi Chu
Keyword(s):  
Band Gap ◽  
Lattice Constant ◽  
Bowing Parameter ◽  
Vegard’S Law

Atomic structure of stair rod misfit dislocations at the GaAs on Si(100) interface

1990 ◽  
Vol 48 (4) ◽  
pp. 342-343
Author(s):  
D. Gerthsen
Keyword(s):  
Lattice Constant ◽  
Atomic Structure ◽  
Spherical Aberration ◽  
Stacking Faults ◽  
Misfit Dislocations ◽  
Gaas On Si ◽  
Thermal Expansion Coefficients ◽  
Transmission Electron ◽  
Intersection Line ◽  
Oriented Parallel

The prospect of technical applications has induced a lot of interest in the atomic structure of the GaAs on Si(100) interface and the defects in its vicinity which are often studied by high resolution transmission electron microscopy. The interface structure is determined by the 4.1% lattice constant mismatch between GaAs and Si, the large difference between the thermal expansion coefficients and the polar/nonpolar nature of the GaAs on Si interface. The lattice constant mismatch is compensated by misfit dislocations which are characterized by a/2<110> Burgers vectors b which are oriented parallel or inclined on {111} planes with respect to the interface. Stacking faults are also frequently observed. They are terminated by partial dislocations with b = a/6<112> on {111} planes. In this report, the atomic structure of stair rod misfit dislocations is analysed which are located at the intersection line of two stacking faults at the interface.A very thin, discontinous film of GaAs has been grown by MBE on a Si(100) substrate. Fig.1.a. shows an interface section of a 27 nm wide GaAs island along [110] containing a stair rod dislocation. The image has been taken with a JEOL 2000EX with a spherical aberration constant Cs = 1 mm, a spread of focus Δz = 10 nm and an angle of beam convergence ϑ of 2 mrad.

Effect of the structural changes on the mechanical properties of the sintered films

2016 ◽  
Vol 12 (1) ◽  
pp. 4141-4144
Author(s):  
Garima Jain
Keyword(s):  
Crystallite Size ◽  
Lattice Constant ◽  
Structural Changes ◽  
Structural Investigation ◽  
Energy Gap ◽  
Lattice Parameter ◽  
Metal Chalcogenides ◽  
Optical Energy Gap ◽  
Tin Telluride ◽  
Physical Quantities

Polycrystalline films of tin telluride were prepared by sintering technique. The structural investigation of the films with different thicknesses enables to determine lattice parameter, crystallite size and strain existing in the films. The XRD traces showed that strain was tensile in nature. The crystallite size increases with thickness while strain decreases. Higher the value of tensile strain, larger is the lattice constant. The optical energy gap shows a descending nature with increasing strain and so with the lattice constant. Such an attempt made to delve into interdependence of basic physical quantities helps to explore the properties of SnTe and utilize it as an alternative to heavy metal chalcogenides in various technological applications.  

Lattice-constant variation of the barium4flevel

1980 ◽  
Vol 22 (10) ◽  
pp. 4600-4603 ◽  
Author(s):  
J. F. Herbst
Keyword(s):  
Lattice Constant
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