scholarly journals The surface effect on the p-type conductivity of Li-doped ZnO film

2012 ◽  
Vol 61 (15) ◽  
pp. 157301
Author(s):  
Si Hang ◽  
He Hai-Yan ◽  
Pan Bi-Cai
Keyword(s):  
Surface Effect ◽  
Zno Film ◽  
Type Conductivity ◽  
Doped Zno ◽  
P Type

First-Principles Study on the Conductive Properties of P-Doped ZnO

2009 ◽  
Vol 79-82 ◽  
pp. 1253-1256 ◽  
Author(s):  
Li Guan ◽  
Qiang Li ◽  
Xu Li ◽  
Jian Xin Guo ◽  
Bo Geng ◽  
...  
Keyword(s):  
Fermi Level ◽  
Valence Band ◽  
Density Functional ◽  
Lattice Structure ◽  
Mulliken Charge ◽  
Total Density ◽  
Type Conductivity ◽  
Doped Zno ◽  
P Type ◽  
Conductive Properties

In the present paper, the lattice structure, band structure and density of state of pure and P-doped ZnO are calculated by first-principle method based on density functional theory. By analyzing the Mulliken charge overlap population and bond length, it is found that the bond of P-Zn is longer and stronger than O-Zn bond for PO-ZnO. But for PZn-ZnO, the O-P bond becomes shorter and more powerful than O-Zn bond. Also, weak O-O bonds are formed in this case. Our results show that the final total energy of PO-ZnO is lower than PZn-ZnO. The lattice structure of PO-ZnO is more stability than PZn-ZnO. For PO-ZnO, The Fermi level moves into the valence band, which expresses that the holes appear on the top of valence band and thus the PO-ZnO exhibits p-type conductivity. For PZn-ZnO, the Fermi level moves up to the conductor band and the total density of states shifts to the lower energy region, thus PZn-ZnO shows the n-type conductivity.

The effect of sulfur on the electrical properties of S and N co-doped ZnO thin films: experiment and first-principles calculations

2015 ◽  
Vol 17 (26) ◽  
pp. 16705-16708 ◽  
Author(s):  
Wenzhe Niu ◽  
Hongbin Xu ◽  
Yanmin Guo ◽  
Yaguang Li ◽  
Zhizhen Ye ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
First Principles ◽  
Zno Thin Films ◽  
First Principles Calculations ◽  
Type Conductivity ◽  
Doped Zno ◽  
P Type ◽  
Co Doped

The S dopants in S–N co-doped ZnO contribute to easier doping and p-type conductivity, as concluded by experiment and calculations.

An alternative approach to investigate the origin of p-type conductivity in arsenic doped ZnO

2015 ◽  
Vol 15 (10) ◽  
pp. 1256-1261 ◽  
Author(s):  
Pranab Biswas ◽  
Palash Nath ◽  
Dirtha Sanyal ◽  
P. Banerji
Keyword(s):  
Type Conductivity ◽  
Alternative Approach ◽  
Doped Zno ◽  
P Type

Effect of doping behaviors of Ag and S on the formation of p-type Ag–S co-doped ZnO film by a modified hydrothermal method

2016 ◽  
Vol 600 ◽  
pp. 13-18 ◽  
Author(s):  
Shiwang Long ◽  
Yongfeng Li ◽  
Bin Yao ◽  
Zhanhui Ding ◽  
Ying Xu ◽  
...  
Keyword(s):  
Hydrothermal Method ◽  
Zno Film ◽  
Doped Zno ◽  
P Type ◽  
Co Doped ◽  
Effect Of Doping ◽  
Modified Hydrothermal Method

scholarly journals Room temperature p-type conductivity and coexistence of ferroelectric order in ferromagnetic Li doped ZnO nanoparticles

2014 ◽  
Vol 116 (16) ◽  
pp. 164109 ◽  
Author(s):  
Saif Ullah Awan ◽  
S. K. Hasanain ◽  
D. H. Anjum ◽  
M. S. Awan ◽  
Saqlain A. Shah
Keyword(s):  
Zno Nanoparticles ◽  
Room Temperature ◽  
Type Conductivity ◽  
Doped Zno ◽  
P Type ◽  
Ferroelectric Order

High quality p-type ZnO film grown on ZnO substrate by nitrogen and tellurium co-doping

2009 ◽  
Vol 1201 ◽  
Author(s):  
Seunghwan Park ◽  
Tsutomu Minegishi ◽  
jinsub Park ◽  
Hyunjae Lee ◽  
Toshinori Taishi ◽  
...  
Keyword(s):  
Electron Concentration ◽  
Hole Concentration ◽  
Nitrogen Concentration ◽  
Zno Film ◽  
Acceptor Pair ◽  
High Quality ◽  
Co Doping ◽  
Donor Acceptor ◽  
Doped Zno ◽  
P Type

AbstractNitrogen and tellurium co-doped ZnO (ZnO:[N+Te]) films have been grown on (0001) ZnO substrate by plasma-assisted molecular beam epitaxy. The electron concentration of tellurium doped ZnO (ZnO:Te) gradually increases, compared that of undoped ZnO (u-ZnO). On the other hand, conductivity of ZnO:[N+Te] changes from n-type to p-type characteristic with a hole concentration of 4×1016 cm-3. However, nitrogen doped ZnO film (ZnO:N) still remain as n-type conductivity with a electron concentration of 2.5×1017 cm-3. Secondary ion mass spectroscopy reveals that nitrogen concentration ([N]) of ZnO:[N+Te] film (2×1021 cm-3) is relatively higher than that of ZnO:N film (3×1020 cm-3). 10 K photoluminescence spectra shows that considerable improvement of emission properties of ZnO:[N+Te] with an emergence of narrow acceptor bound exciton (A°X, 3.359 eV) and donor-acceptor pair (DAP, 3.217 eV), compared with those of u-ZnO. Consequently, high quality p-type ZnO with high N concentration is realized by using Te and N co-doping technique due to reduction of Madelung energy.

Improved p-type conductivity and acceptor states in N-doped ZnO thin films

2007 ◽  
Vol 40 (10) ◽  
pp. 3177-3181 ◽  
Author(s):  
Jianguo Lu ◽  
Qunian Liang ◽  
Yinzhu Zhang ◽  
Zhizhen Ye ◽  
Shizuo Fujita
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Type Conductivity ◽  
Doped Zno ◽  
P Type

Mechanism of p-type conductivity for phosphorus-doped ZnO thin film

2008 ◽  
Vol 42 (1) ◽  
pp. 015407 ◽  
Author(s):  
B Yao ◽  
Y P Xie ◽  
C X Cong ◽  
H J Zhao ◽  
Y R Sui ◽  
...  
Keyword(s):  
Thin Film ◽  
Zno Thin Film ◽  
Type Conductivity ◽  
Doped Zno ◽  
P Type ◽  
Phosphorus Doped

Effect of O–O bonds on p-type conductivity in Ag-doped ZnO twin grain boundaries

2018 ◽  
Vol 27 (5) ◽  
pp. 057701
Author(s):  
Jingjing Wu ◽  
Xin Tang ◽  
Fei Long ◽  
Biyu Tang
Keyword(s):  
Grain Boundaries ◽  
Type Conductivity ◽  
Doped Zno ◽  
P Type
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