scholarly journals Influence of Fe-B pairs on minority carrier lifetime, trapping density and internal quantum efficiency in mono-crystal Si solar cells

2010 ◽  
Vol 59 (6) ◽  
pp. 4322
Author(s):  
Li Feng ◽  
Ma Zhong-Quan ◽  
Meng Xia-Jie ◽  
Yin Yan-Ting ◽  
Yu Zheng-Shan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Efficiency ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Internal Quantum Efficiency ◽  
Minority Carrier Lifetime ◽  
Si Solar Cells

Development of High-Performance GaAs Solar Cells on Large-Grain Polycrystalline Ge Substrates

1995 ◽  
Vol 403 ◽  
Author(s):  
R. Venkatasubramanian ◽  
B. O'Quinn ◽  
J. S. Hills ◽  
M. L. Timmons ◽  
D. P. Malta
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Cross Sectional ◽  
Plan View ◽  
Electron Beam Induced Current ◽  
Induced Defects

AbstractThe characterization of MOCVD-grown GaAs-AlGaAs materials and GaAs p+n junctions on poly-Ge substrates is presented. Minority carrier lifetime in GaAs-AIGaAs double-hetero (DH) structures grown on these substrates and the variation of lifetimes across different grainstructures are discussed. Minority-carrier diffusion lengths in polycrystalline GaAs p+-n junctions were evaluated by cross-sectional electron-beam induced current (EBIC) scans. The junctions were also studied by plan-view EBIC imaging. Optimization studies of GaAs solar cell on poly-Ge are discussed briefly. The effect of various polycrystalline substrate-induced defects on performance of GaAs solar cells are presented.

scholarly journals Minority Carrier Lifetime Measurement in Nanowire Based Solar Cells by a Reverse Recovery Transient Method

2014 ◽  
Vol 60 ◽  
pp. 181-190
Author(s):  
M. Daanoune ◽  
D. Kohen ◽  
A. Kaminski-Cachopo ◽  
C. Morin ◽  
P. Faucherand ◽  
...  
Keyword(s):  
Solar Cells ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Lifetime Measurement ◽  
Transient Method

Casting Single Crystal Silicon: Novel Defect Profiles from BP Solar's Mono2 TM Wafers

2007 ◽  
Vol 131-133 ◽  
pp. 1-8 ◽  
Author(s):  
Nathan Stoddard ◽  
Bei Wu ◽  
Ian Witting ◽  
Magnus C. Wagener ◽  
Yongkook Park ◽  
...  
Keyword(s):  
Solar Cells ◽  
Crystal Growth ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Single Crystal Silicon ◽  
Minority Carrier Lifetime ◽  
Crystal Silicon ◽  
Growth Method ◽  
Screen Print ◽  
The Impact

A novel crystal growth method has been developed for the production of ingots, bricks and wafers for solar cells. Monocrystallinity is achievable over large volumes with minimal dislocation incorporation. The resulting defect types, densities and interactions are described both microscopically for wafers and macroscopically for the ingot, looking closely at the impact of the defects on minority carrier lifetime. Solar cells of 156 cm2 size have been produced ranging up to 17% in efficiency using industrial screen print processes.

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