scholarly journals On detection wavelength and electron-hole wave function overlap of type Ⅱ InAs/InxGa1-xSb superlattice infrared photodetector

2010 ◽  
Vol 59 (5) ◽  
pp. 3099
Author(s):  
Huang Jian-Liang ◽  
Wei Yang ◽  
Ma Wen-Quan ◽  
Yang Tao ◽  
Chen Liang-Hui
1989 ◽  
Vol 66 (10) ◽  
pp. 4791-4800 ◽  
Author(s):  
K. Sadra ◽  
C. M. Maziar ◽  
B. G. Streetman ◽  
D. S. Tang

1991 ◽  
Vol 43 (11) ◽  
pp. 9350-9353 ◽  
Author(s):  
M. Olszakier ◽  
E. Ehrenfreund ◽  
E. Cohen

Nanoscale ◽  
2017 ◽  
Vol 9 (37) ◽  
pp. 14127-14138 ◽  
Author(s):  
Meghan B. Teunis ◽  
Mulpuri Nagaraju ◽  
Poulami Dutta ◽  
Jingzhi Pu ◽  
Barry B. Muhoberac ◽  
...  

An unprecedentedly large bathochromic-shift in the optical band of (CdSe)34 SCMs is observed upon passivating their surface with hole delocalizing ligands.


2019 ◽  
Vol 99 (20) ◽  
Author(s):  
Shuai Chen ◽  
Qing-Rui Wang ◽  
Yang Qi ◽  
D. N. Sheng ◽  
Zheng-Yu Weng

2018 ◽  
Vol 97 (12) ◽  
Author(s):  
Ning Bao ◽  
Sean M. Carroll ◽  
Aidan Chatwin-Davies ◽  
Jason Pollack ◽  
Grant N. Remmen

Author(s):  
Peter Rez

In high resolution microscopy the image amplitude is given by the convolution of the specimen exit surface wave function and the microscope objective lens transfer function. This is usually done by multiplying the wave function and the transfer function in reciprocal space and integrating over the effective aperture. For very thin specimens the scattering can be represented by a weak phase object and the amplitude observed in the image plane is1where fe (Θ) is the electron scattering factor, r is a postition variable, Θ a scattering angle and x(Θ) the lens transfer function. x(Θ) is given by2where Cs is the objective lens spherical aberration coefficient, the wavelength, and f the defocus.We shall consider one dimensional scattering that might arise from a cross sectional specimen containing disordered planes of a heavy element stacked in a regular sequence among planes of lighter elements. In a direction parallel to the disordered planes there will be a continuous distribution of scattering angle.


Author(s):  
Martin Peckerar ◽  
Anastasios Tousimis

Solid state x-ray sensing systems have been used for many years in conjunction with scanning and transmission electron microscopes. Such systems conveniently provide users with elemental area maps and quantitative chemical analyses of samples. Improvements on these tools are currently sought in the following areas: sensitivity at longer and shorter x-ray wavelengths and minimization of noise-broadening of spectral lines. In this paper, we review basic limitations and recent advances in each of these areas. Throughout the review, we emphasize the systems nature of the problem. That is. limitations exist not only in the sensor elements but also in the preamplifier/amplifier chain and in the interfaces between these components.Solid state x-ray sensors usually function by way of incident photons creating electron-hole pairs in semiconductor material. This radiation-produced mobile charge is swept into external circuitry by electric fields in the semiconductor bulk.


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