scholarly journals Thermal stability of structure and properties of CHx doped SiCOH low dielectric constant films

2009 ◽  
Vol 58 (1) ◽  
pp. 575
Author(s):  
Du Jie ◽  
Ye Chao ◽  
Yu Xiao-Zhu ◽  
Zhang Hai-Yan ◽  
Ning Zhao-Yuan
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Structure And Properties ◽  
Low Dielectric ◽  
Stability Of Structure ◽  
Thermal Stability Of

Curing Process Window and Thermal Stability of Porous MSQ-Based Low-Dielectric-Constant Materials

2004 ◽  
Vol 151 (6) ◽  
pp. F146 ◽  
Author(s):  
Shou-Yi Chang ◽  
Tzu-Jen Chou ◽  
Yung-Cheng Lu ◽  
Syun-Ming Jang ◽  
Su-Jien Lin ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Process Window ◽  
Curing Process ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials ◽  
Thermal Stability Of

Thermal stability of low dielectric constant porous silica films

2005 ◽  
Vol 87 (26) ◽  
pp. 262909 ◽  
Author(s):  
L. Esposito ◽  
G. Ottaviani ◽  
E. Carollo ◽  
M. Bacchetta
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Porous Silica ◽  
Low Dielectric Constant ◽  
Silica Films ◽  
Low Dielectric ◽  
Thermal Stability Of

Properties and thermal stability of porous organic low-dielectric-constant materials

2004 ◽  
Vol 466 (1-2) ◽  
pp. 54-61 ◽  
Author(s):  
Shou-Yi Chang ◽  
Syun-Ming Jang ◽  
Su-Jien Lin ◽  
Mong-Song Liang
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials ◽  
Thermal Stability Of

Deposition of Fluorinated Amorphous Carbon Thin Films with Low Dielectric Constant and Thermal Stability

2000 ◽  
Vol 612 ◽  
Author(s):  
Sang-Soo Han ◽  
Byeong-Soo Bae
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Dielectric Constant ◽  
Amorphous Carbon ◽  
Inductively Coupled Plasma ◽  
Gas Flow ◽  
Stable Condition ◽  
Flow Rate Ratio ◽  
Low Dielectric Constant ◽  
Low Dielectric

AbstractFluorinated amorphous carbon (a-C:F) thin films were deposited by inductively coupled plasma enhanced chemical vapor deposition (ICP-CVD) with increasing CF4:CH4 gas flow rate ratio, and then annealed with increasing annealing temperature (100, 200, 300, and 400.). We have found the reduction mechanism of the dielectric constant and the thermally stable condition for the a-C:F films. On the basis of the results, the optimal condition to satisfy both the low dielectric constant and the thermal stability is followed as; the a-C:F films have to have the compatible F content to make a compromise between the two properties; the C-Fx bonding configuration has to exist as a form of C-F2 & C-F3 instead of C-F; The films should be somewhat cross-linked structure.

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