scholarly journals Terahertz power dissipation spectra of electrons in bulk GaAs under high electric fields at low temperature

2009 ◽  
Vol 58 (4) ◽  
pp. 2692
Author(s):  
Zhu Yi-Ming ◽  
Kaz Hirakawa ◽  
Chen Lin ◽  
He Bo-Yong ◽  
Huang Yuan-Shen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electric Fields ◽  
Power Dissipation ◽  
Bulk Gaas ◽  
High Electric Fields

Power dissipation spectra and terahertz intervalley transfer gain in bulk GaAs under high electric fields

2008 ◽  
Vol 93 (23) ◽  
pp. 232102 ◽  
Author(s):  
Y. M. Zhu ◽  
T. Unuma ◽  
K. Shibata ◽  
K. Hirakawa ◽  
Y. Ino ◽  
...  
Keyword(s):  
Electric Fields ◽  
Power Dissipation ◽  
Bulk Gaas ◽  
High Electric Fields

Low-Temperature Switching in PbTe at High Electric Fields

1993 ◽  
Vol 103-105 ◽  
pp. 437-442
Author(s):  
B.A. Akimov ◽  
A.V. Albul ◽  
E.V. Bogdanov
Keyword(s):  
Low Temperature ◽  
Electric Fields ◽  
High Electric Fields

Low-temperature switching in PbTe(Ga) at high electric fields

1993 ◽  
Vol 8 (1S) ◽  
pp. S447-S450 ◽  
Author(s):  
B A Akimov ◽  
A V Albul ◽  
E V Bogdanov
Keyword(s):  
Low Temperature ◽  
Electric Fields ◽  
High Electric Fields

The Joint Measurements of Electroluminescence and Photoluminescence of PET Films under Low Temperature

2010 ◽  
Vol 44-47 ◽  
pp. 2632-2636 ◽  
Author(s):  
Jia Qi Lin ◽  
Chen Wang ◽  
Jun Hui Shi
Keyword(s):  
Low Temperature ◽  
Electric Fields ◽  
Light Emission ◽  
Threshold Value ◽  
Breakdown Field ◽  
Xenon Lamp ◽  
Significant Change ◽  
High Electric Fields ◽  
Set Up ◽  
Pet Films

The EL intensity and the spectrum of the PET films were tested under the low temperature by home-made experimental set-up on the conditions of DC high electric fields and irradiated by xenon lamp. The result shows that there are emission peaks at about 350~450nm, 500~600nm and 750nm in the EL spectrum of the PET films. The intensity of light emission increases with the applied electric fields; the pre-breakdown field is about 3.3MV/cm, this threshold value is no significant change which compares with the normal temperature.

Atomic Spectroscopy in the FIM

1986 ◽  
Vol 44 ◽  
pp. 758-761
Author(s):  
J. J. Hren ◽  
S. D. Walck
Keyword(s):  
Electron Microscope ◽  
Electric Fields ◽  
Atom Probe ◽  
Atomic Spectroscopy ◽  
Single Atom ◽  
Statistical Sampling ◽  
Commercial Instrument ◽  
Available Technology ◽  
High Electric Fields ◽  
Field Ion Microscope

The field ion microscope (FIM) has had the ability to routinely image the surface atoms of metals since Mueller perfected it in 1956. Since 1967, the TOF Atom Probe has had single atom sensitivity in conjunction with the FIM. “Why then hasn't the FIM enjoyed the success of the electron microscope?” The answer is closely related to the evolution of FIM/Atom Probe techniques and the available technology. This paper will review this evolution from Mueller's early discoveries, to the development of a viable commercial instrument. It will touch upon some important contributions of individuals and groups, but will not attempt to be all inclusive. Variations in instrumentation that define the class of problems for which the FIM/AP is uniquely suited and those for which it is not will be described. The influence of high electric fields inherent to the technique on the specimens studied will also be discussed. The specimen geometry as it relates to preparation, statistical sampling and compatibility with the TEM will be examined.

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