scholarly journals Theoretical study on radiative recombination and subsequent radiative decay of H-like uranium ions

2009 ◽  
Vol 58 (4) ◽  
pp. 2358
Author(s):  
Wang Yong-Jun ◽  
Ding Xiao-Bin ◽  
Dong Chen-Zhong ◽  
Ma Xin-Wen ◽  
Wan Jian-Jie ◽  
...  
2010 ◽  
Vol 59 (6) ◽  
pp. 3871
Author(s):  
Sang Cui-Cui ◽  
Wang Yong-Jun ◽  
Wan Jian-Jie ◽  
Ding Xiao-Bin ◽  
Dong Chen-Zhong

2017 ◽  
Vol 19 (34) ◽  
pp. 23532-23540 ◽  
Author(s):  
Wei Shen ◽  
Wenting Zhang ◽  
Chaoyuan Zhu

By taking into account the energy gap law, relaxation dynamics and triplet–triplet annihilation (TTA), six organometallic complexes are systematically investigated for possible non-radiative decay processes.


1995 ◽  
Vol 74 (1) ◽  
pp. 54-57 ◽  
Author(s):  
D. A. Knapp ◽  
P. Beiersdorfer ◽  
M. H. Chen ◽  
J. H. Scofield ◽  
D. Schneider

2007 ◽  
Vol 25 (10) ◽  
pp. 1467-1473 ◽  
Author(s):  
Ling LIN ◽  
Li-Li ZU ◽  
Wei-Hai FANG ◽  
Jian-Guo YU ◽  
Ruo-Zhuang LIU

Nano Hybrids ◽  
2014 ◽  
Vol 6 ◽  
pp. 1-35 ◽  
Author(s):  
Manjunatha Pattabi ◽  
Rani M. Pattabi

This review is an attempt to highlight some of the significant results of the work carried out on the photoluminescence from nanoparticles of the noble metals, particularly gold and silver, over the past two decades. Although quite an immense amount of reports can be found, those that have contributed in throwing some light on the underlying mechanism behind photoluminescence have been considered here. Interband radiative recombination of electrons in metals or photoluminescence (PL), though very weak, was first reported in Au, Cu and Au-Cu alloys. A simple model attributes the PL to the radiative recombination of conduction band electrons below the Fermi energy with d-band holes. Most of the mechanisms are based on this concept. Only small sized clusters are known to exhibit luminescence, with the appearance of additional features which changed with the surfactants suggesting ligand to metal charge transfer. Further, the observation that more polar ligands do indeed enhance the luminescence intensity supports ligand to metal charge transfer. A non-radiative decay of excited electrons from 6sp-band to interface electron energy levels or bands (IEEB), that could be created due to charge transfer from the ligand to the metal core, followed by radiative recombination of electrons from these levels with the hole in the d-band could be another possible mechanism, which is supported by the size independence of the PL emission peak position. However, it is possible that these mechanisms operate independently or even simultaneously depending on various factors like size, ligands, dispersion medium, particle surface topography and so on.


2008 ◽  
Vol 463 (1-3) ◽  
pp. 201-205 ◽  
Author(s):  
Valdemir Ludwig ◽  
Marcos Serrou do Amaral ◽  
Zélia M. da Costa ◽  
Antonio Carlos Borin ◽  
Sylvio Canuto ◽  
...  

2011 ◽  
Vol 135 (1) ◽  
pp. 014304 ◽  
Author(s):  
Chunmei Deng ◽  
Yingli Niu ◽  
Qian Peng ◽  
Anjun Qin ◽  
Zhigang Shuai ◽  
...  

1997 ◽  
Vol 51 (12) ◽  
pp. 1849-1853
Author(s):  
H. Z. Wu ◽  
Z. Z. Li ◽  
S. T. Ye ◽  
Z. W. Tian

Spectroscopic studies of the minority electron lifetimes and photo-luminescence efficiencies of heavily carbon-doped GaAs are reported. The GaAs layers were grown by metal organic chemical vapor epitaxy (MOVPE) at 650 °C with carbon tetrabromide used as a dopant source. Combined minority electron lifetime and internal quantum efficiency measurements allowed us to determine the radiative decay times in heavily carbon-doped GaAs to be longer than that we would expect if a value for the radiative recombination constant of B = 2.0 × 10−10 cm3 s−1 were used. Taking into account the effects of hole–hole and hole–ionized impurity scattering, we show that B decreases as hole density increases in heavily carbon-doped GaAs. With the use of the revised values for B, the calculated radiative decay times were compatible with our measurements. Index Headings: Radiative decay times; Luminescence efficiency; Radiative recombination constant; Carrier–carrier interaction; Band structure changes.


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