scholarly journals Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation

2007 ◽  
Vol 56 (8) ◽  
pp. 4930
Author(s):  
Hu Liang-Jun ◽  
Chen Yong-Hai ◽  
Ye Xiao-Ling ◽  
Wang Zhan-Guo
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
High Energy ◽  
Electrical And Optical Properties

Electrical and optical properties of self-assembled InAs quantum dots in InP studied by space-charge spectroscopy and photoluminescence

2000 ◽  
Vol 61 (7) ◽  
pp. 4795-4800 ◽  
Author(s):  
H. Pettersson ◽  
C. Pryor ◽  
L. Landin ◽  
M.-E. Pistol ◽  
N. Carlsson ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Space Charge ◽  
Electrical And Optical Properties ◽  
Inas Quantum Dots ◽  
Self Assembled

scholarly journals Effects of annealing on electrical and optical properties of a multilayer InAs/GaAs quantum dots system

2004 ◽  
Vol 7 (3) ◽  
pp. 459-465 ◽  
Author(s):  
Adenilson José Chiquito ◽  
Yuri Alexander Pusep ◽  
Sérgio Mergulhão ◽  
Yara Galvão Gobato ◽  
José Cláudio Galzerani ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Electrical And Optical Properties

Effect of high energy ion irradiation on electrical and optical properties of para-hydroxy acetophenone

1997 ◽  
Vol 81 (11) ◽  
pp. 7526-7528 ◽  
Author(s):  
P. Sreeramana Aithal ◽  
H. S. Nagaraja ◽  
P. Mohan Rao ◽  
D. K. Avasthi ◽  
Asati Sarma
Keyword(s):  
Optical Properties ◽  
Ion Irradiation ◽  
High Energy ◽  
Electrical And Optical Properties

scholarly journals Strain Effects on Optical Properties of (In,Ga)As-Capped InAs Quantum Dots Grown by Molecular Beam Epitaxy on GaAs (113)A Substrate

2011 ◽  
Vol 2011 ◽  
pp. 1-5
Author(s):  
Faouzi Saidi ◽  
Mouna Bennour ◽  
Lotfi Bouzaïene ◽  
Larbi Sfaxi ◽  
Hassen Maaref
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions ◽  
High Energy ◽  
Biaxial Strain ◽  
High Energy Electron ◽  
Inas Quantum Dots ◽  
Small Quantum

We have investigated the optical properties of InAs/GaAs (113)A quantum dots grown by molecular beam epitaxy (MBE) capped by (In,Ga)As. Reflection high-energy electron diffraction (RHEED) is used to investigate the formation process of InAs quantum dots (QDs). A broadening of the PL emission due to size distribution of the dots, when InAs dots are capped by GaAs, was observed. A separation between large and small quantum dots, when they are encapsulated by InGaAs, was shown due to hydrostatic and biaxial strain action on large and small dots grown under specifically growth conditions. The PL polarization measurements have shown that the small dots require an elongated form, but the large dots present a quasi-isotropic behavior.

HIGH TEMPERATURE STABILITY OF OPTICAL PROPERTIES OF InAs QUANTUM DOTS REALIZED BY CONTROLLING OF QUANTUM DOTS ELECTRONIC SPECTRUM

2007 ◽  
Vol 06 (03n04) ◽  
pp. 283-286 ◽  
Author(s):  
N. V. KRYZHANOVSKAYA ◽  
A. G. GLADYSHEV ◽  
S. A. BLOKHIN ◽  
A. P. VASIL'EV ◽  
E. S. SEMENOVA ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
High Temperature ◽  
Room Temperature ◽  
Temperature Stability ◽  
High Energy ◽  
Energy Separation ◽  
High Temperature Stability ◽  
Carrier Distribution ◽  
Inas Quantum Dots

The optical properties of InAs /( Al ) GaAs quantum dots (QDs) overgrowth by thin AlAs / InAlAs layers are studied as a function of temperature from 10 to 500 K. The QDs emit at 1.27 μm at room temperature. It is shown that the QD energetic spectrum can be tuned by overgrowth of AlAs / InAlAs to provide high temperature stability of the QDs optical properties. Transport of carriers between neighboring QDs is absent, and the carrier distribution remains nonthermal up to room temperature. It is shown that suppression of the thermal escaping of the carriers from QDs is conditioned by high energy separation between ground and excited states, absence of wetting layer level, and increase of carrier localization energy in QDs in case of the Al 0.3 Ga 0.7 As matrix.

High energy ion irradiation effect on electrical and optical properties of polymers

2021 ◽  
pp. 109931
Author(s):  
Muhammad Asif ◽  
Ahsan Ali ◽  
Ahmed Fuwad ◽  
Anwar Latif ◽  
Muhammad Shahid Rafique ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Irradiation ◽  
High Energy ◽  
Irradiation Effect ◽  
Electrical And Optical Properties

The Effect of Ionizing Radiations on the Structural, Electrical and Optical Properties of AIIBVI Polycrystalline Thin Films Used as Solar Cell Materials

2007 ◽  
Vol 1012 ◽  
Author(s):  
Lucian Ion ◽  
Vlad Andrei Antohe ◽  
Marian Ghenescu ◽  
Oana Ghenescu ◽  
Rosemary Bazavan ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Solar Cell ◽  
High Energy ◽  
Growth Direction ◽  
Cubic Phase ◽  
Electrical And Optical Properties ◽  
Polycrystalline Thin Films ◽  
Cdte Thin Films ◽  
Ionizing Radiations

AbstractThe effects of irradiation with high-energy protons (3 MeV, up to a fluency of 1013 protons/cm2), on structural, electrical and optical properties of polycrystalline CdS and CdTe thin films have been investigated. XRD investigation has revealed that the films contain wurtzite-type CdS, (001) preferentially oriented in the growth direction, and cubic phase CdTe, respectively. The defects induced by ionizing radiations have been studied by thermally stimulated currents spectroscopy (TSC). Parameters of identified defect levels were determined and their possible origin is discussed.

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