scholarly journals Influences of acetylene gas flow rate on mechanical properties and chemical structure of nanocomposite TiC diamond-like carbon films

2007 ◽  
Vol 56 (4) ◽  
pp. 2377
Author(s):  
Ma Guo-Jia ◽  
Liu Xi-Liang ◽  
Zhang Hua-Fang ◽  
Wu Hong-Chen ◽  
Peng Li-Ping ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Flow Rate ◽  
Chemical Structure ◽  
Gas Flow ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Gas Flow Rate

Relationship between Precursor Gas Flow Rate with the Structural and Morphology Properties of Diamond like Carbon Films

2014 ◽  
Vol 970 ◽  
pp. 128-131
Author(s):  
Ong Wai Kit ◽  
Karim bin Deraman ◽  
Wan Nurulhuda Wan Shamsuri ◽  
Jackie Chen Keng Yik
Keyword(s):  
Flow Rate ◽  
Gas Flow ◽  
Chemical Vapour ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Gas Flow Rate ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Direct Current Plasma

Diamond like carbon (DLC) thin films were grown onto glass substrates by using direct current plasma enhance chemical vapour deposition (DC-PECVD) system. Films were deposited under fixed deposition pressure (4 x 10-1 Torr), substrate temperature (500°C) and deposition time (3 hours) but with different flow rate of precursor gas (methane, hydrogen and argon). The fabricated films were characterized by using x-ray diffraction (XRD) and atomic force microscopy (AFM). XRD has revealed that the DLC films were having amorphous phase as the XRD spectrum did not show any obvious sharp peak. From AFM, it was discovered that the precursor gas flow rate has inversely relationship with the grain size and surface roughness of films.

Effect of Nitrogen Gas Flow Rate on Properties of Diamond Like Carbon Films Prepared by Magnetron Sputtering

2019 ◽  
Vol 48 (4) ◽  
pp. 416003
Author(s):  
王洪美 WANG Hong-mei ◽  
李玉芳 LI Yu-fang ◽  
沈鸿烈 SHEN Hong-lie ◽  
翟子豪 ZHAI Zi-hao ◽  
陈洁仪 CHEN Jie-yi ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Flow Rate ◽  
Gas Flow ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Gas Flow Rate ◽  
Nitrogen Gas

Effects of fluorine incorporation on the structural and electrical properties of Diamond-like carbon

2015 ◽  
Vol 1734 ◽  
Author(s):  
Kento Nakanishi ◽  
Jun Otsuka ◽  
Masanori Hiratsuka ◽  
Chen Chung Du ◽  
Akira Shirakura ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Electrical Properties ◽  
Flow Rate ◽  
Gas Flow ◽  
Diamond Like Carbon ◽  
Gas Flow Rate ◽  
Sheet Resistivity ◽  
Nitrogen Doped ◽  
Structural And Electrical Properties

ABSTRACTDiamond-like carbon (DLC) has widespread attention as a new material for its application to thin film solar cells and other semiconducting devices. DLC can be produced at a lower cost than amorphous silicon, which is utilized for solar cells today. However, the electrical properties of DLC are insufficient for this purpose because of many dangling bonds in DLC. To solve this problem, we investigated the effects of the fluorine incorporation on the structural and electrical properties of DLC.We prepared five kinds of fluorinated DLC (F-DLC) thin film with different amounts of fluorine. Films were deposited by the radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) method. C6H6 and C6HF5 were used as source gases. The total gas flow rate was constant and the gas flow rate ratio R (=C6H6 / (C6H6 + C6HF5)) was changed from 0 to 1 in 0.25 ratio steps. We also prepared nitrogen doped DLC (F-DLC) on p-Si using N2 gas as a doping gas to form nitrogen doped DLC (F-DLC) / p-Si heterojunction diodes.X-ray photoelectron spectroscopy (XPS) showed that fluorine concentration in the DLC films was controlled. Moreover, the XPS analysis of the C1s spectrum at R=2/4 showed the presence of CF bonding. At R=1, CF2 bonding was observed in addition to CF bonding. The sheet resistivity of the films changed from 3.07×1012 to 4.86×109 Ω. The minimum value was obtained at R=2/4. The current-voltage characteristics indicated that nitrogen doped F-DLC of 2/4 and p-Si heterojunction diode exhibited the best rectification characteristics and its energy conversion efficiency had been maximized. This is because of a decrease of dangling bonds density by ESR analysis and an increase of sp2 structures by Raman analysis. When the fluorine is over certain content, the sheet resistivity increases because chain structures become larger, which is due to the CF2 bonding in F-DLC prevents ring structures. Many C2F4 species were observed and it may become precursors of the chain structure domains, such as (CF2)n.In this study, we revealed effects of fluorine incorporation on DLC and succeeded in increasing its conductivity and improving rectification characteristics of DLC/ p-Si hetero-junction diodes. Our results indicate that DLC fluorination is effective for the semiconducting material, such as solar cell applications.

scholarly journals The Effect of Process Parameters on the Microstructure and Mechanical Properties of AW5083 Aluminum Laser Weld Joints

Metals ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 1443 ◽  
Author(s):  
Maroš Vyskoč ◽  
Miroslav Sahul ◽  
Mária Dománková ◽  
Peter Jurči ◽  
Martin Sahul ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Tensile Strength ◽  
Process Parameters ◽  
Flow Rate ◽  
Weld Joint ◽  
Gas Flow ◽  
Filler Wire ◽  
Shielding Gas ◽  
Gas Flow Rate ◽  
Weld Joints

In this article, the effect of process parameters on the microstructure and mechanical properties of AW5083 aluminum alloy weld joints welded by a disk laser were studied. Butt welds were produced using 5087 (AlMg4.5MnZr) filler wire, with a diameter of 1.2 mm, and were protected from the ambient atmosphere by a mixture of argon and 30 vol.% of helium (Aluline He30). The widest weld joint (4.69 mm) and the highest tensile strength (309 MPa) were observed when a 30 L/min shielding gas flow rate was used. Conversely, the narrowest weld joint (4.15 mm) and the lowest tensile strength (160 MPa) were found when no shielding gas was used. The lowest average microhardness (55.4 HV0.1) was recorded when a 30 L/min shielding gas flow rate was used. The highest average microhardness (63.9 HV0.1) was observed when no shielding gas was used. In addition to the intermetallic compounds, β-Al3Mg2 and γ-Al12Mg17, in the inter-dendritic areas of the fusion zone (FZ), Al49Mg32, which has an irregular shape, was recorded. The application of the filler wire, which contains zirconium, resulted in grain refinement in the fusion zone. The protected weld joint was characterized by a ductile fracture in the base material (BM). A brittle fracture of the unshielded weld joint was caused by the presence of Al2O3 particles. The research results show that we achieved the optimal welding parameters, because no cracks and pores were present in the shielded weld metal (WM).

scholarly journals Investigation of Mechanical Properties of Metal Inert Gas-Brazed TRIP800 Steel Joints Using Different Shielding Gas Flow Rate

2014 ◽  
Vol 125 (2) ◽  
pp. 473-474 ◽  
Author(s):  
N. Akkas ◽  
F. Varol ◽  
E. Ferik ◽  
E. Ilhan ◽  
U. Ozsarac ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Flow Rate ◽  
Gas Flow ◽  
Inert Gas ◽  
Shielding Gas ◽  
Gas Flow Rate ◽  
Steel Joints

Welding Repair of Aluminium Alloy 6082 T6 by TIG Welding Process

2016 ◽  
Vol 872 ◽  
pp. 3-7
Author(s):  
Kraiwut Hoyingchareon ◽  
Prapas Muangjunburee
Keyword(s):  
Mechanical Properties ◽  
Weld Metal ◽  
Aluminium Alloy ◽  
Flow Rate ◽  
Heat Affected Zone ◽  
Gas Flow ◽  
Welding Process ◽  
Tig Welding ◽  
Gas Flow Rate ◽  
Complete Melting

This work focuses on welding repair of aluminium alloy 6082 T6 by TIG welding process. Two types of filler, 4043 and 5356 were used. A comparison at I= 120A,140A, welding speed 20cm/min and gas flow rate 15 L/min was studied. Physical characteristics, macrostructure and microstructure at weld metal and Heat Affected Zone (HAZ) were investigated. Which at 140A can welding repair. The parameter 140A have complete melting and fail area at HAZ and mechanical properties more than 120A.

Study on Effects of Carrier Gas Flow Rate on Properties of Low Dielectric Constant Film Deposited by Plasma Enhanced Chemical Vapor Deposition Using the Octamethylcyclotetrasiloxane Precursor

2021 ◽  
Vol 21 (8) ◽  
pp. 4470-4476
Author(s):  
Yoonsoo Park ◽  
Hyuna Lim ◽  
Namwuk Baek ◽  
Seung Hun Park ◽  
Sungwoo Lee ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Flow Rate ◽  
Chemical Structure ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Low Dielectric Constant ◽  
Gas Flow Rate ◽  
Carrier Gas ◽  
Low Dielectric ◽  
Carrier Gas Flow

In semiconductor industry, low-dielectric-constant SiCOH films are widely used as inter-metal dielectric (IMD) material to reduce a resistance-capacitance delay, which could degrade performances of semiconductor chips. Plasma enhanced chemical vapor deposition (PECVD) system has been employed to fabricate the low-dielectric-constant SiCOH films. In this work, among various parameters (plasma power, deposition pressure, substrate temperature, precursor injection flow rate, etc.), helium carrier gas flow rate was used to modulate the properties of the low-dielectric-constant SiCOH films. Octamethylcyclotetrasiloxane (OMCTS) precursor and helium were injected into the process chamber of PECVD. And then SiCOH films were deposited varying helium carrier gas flow rate. As helium carrier gas flow rate increased from 1500 to 5000 sccm, refractive indices were increased from 1.389 to 1.428 with enhancement of mechanical strength, i.e., increased hardness and elastic modulus from 1.7 and 9.1 GPa to 3.3 and 19.8 GPa, respectively. However, the relative dielectric constant (k) value was slightly increased from 2.72 to 2.97. Through analysis of Fourier transform infrared (FTIR) spectroscopy, the effects of the helium carrier gas flow rate on chemical structure, were investigated. It was thought that the increase in helium carrier gas flow rate could affect the density with changes of chemical structure and composition. In conclusion, regulation of helium carrier gas flow rate can effectively modulate k values and mechanical strength, which is needed for IMD material in semiconductor fabrication possess.

Preparation and Mechanical Characterization of Amorphous B-C Films

2014 ◽  
Vol 970 ◽  
pp. 124-127 ◽  
Author(s):  
Shahira Liza ◽  
Hiroki Akasaka ◽  
Masayuki Nakano ◽  
Naoto Ohtake
Keyword(s):  
Mechanical Properties ◽  
Flow Rate ◽  
Gas Flow ◽  
Boron Content ◽  
Film Surface ◽  
Chemical Vapor ◽  
High Hardness ◽  
Atomic Ratio ◽  
Gas Flow Rate ◽  
Gas Pressures

This study has demonstrated that trimethylboron, B(CH3)3 is a suitable boron source material for the fabrication amorphous boron carbide (a-BC:H) films. a-BC:H films were deposited by pluse plasma chemical vapor deposition on a silicon substrate (100) with different gas pressures and gas flow rates at constant voltage, -5 kV . The grown a-BC:H films were found to be porous surface and their thickness were in the range of 0.95 to 1.56 μm for 3 h of deposition time. Results indicated that the boron contents, morphologies and mechanical properties of the a-BC:H films were dependent on the gas pressures and gas flow rate. The increased of boron content will introduce more porous film surface. The effect of boron content on the mechanical properties such as hardness, Youngs modulus, and wear resistance were discussed. The good quality film is obtained from B(CH3)3 at 5 Pa and gas flow rate of 15 cm3/min which boron to carbon atomic ratio is 0.43. This film has lower friction coefficient (0.3) sliding against stainless steel ball, high hardness (8.1 GPa) and Youngs modulus (62.2 GPa).

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