scholarly journals Energy calculation of the stacking fault in fcc metals by embedded-atom method

2006 ◽  
Vol 55 (1) ◽  
pp. 393
Author(s):  
Zhang Jian-Min ◽  
Wu Xi-Jun ◽  
Huang Yu-Hong ◽  
Xu Ke-Wei
Keyword(s):  
Stacking Fault ◽  
Embedded Atom Method ◽  
Energy Calculation ◽  
Fcc Metals ◽  
Embedded Atom

Calculations of stacking fault energy for fcc metals and their alloys based on an improved embedded-atom method

1995 ◽  
Vol 96 (10) ◽  
pp. 729-734 ◽  
Author(s):  
Xiliang Nie ◽  
Renhui Wang ◽  
Yiying Ye ◽  
Yumei Zhou ◽  
Dingsheng Wang
Keyword(s):  
Stacking Fault ◽  
Stacking Fault Energy ◽  
Embedded Atom Method ◽  
Fcc Metals ◽  
Embedded Atom

Modified embedded-atom method potentials for the plasticity and fracture behaviors of unary fcc metals

2021 ◽  
Vol 103 (9) ◽  
Author(s):  
Zachary H. Aitken ◽  
Viacheslav Sorkin ◽  
Zhi Gen Yu ◽  
Shuai Chen ◽  
Zhaoxuan Wu ◽  
...  
Keyword(s):  
Embedded Atom Method ◽  
Fcc Metals ◽  
Embedded Atom ◽  
Fracture Behaviors ◽  
Modified Embedded Atom Method

scholarly journals Energy calculation of point defects in plutonium by embedded atom method

2010 ◽  
Vol 59 (7) ◽  
pp. 4818
Author(s):  
Hu Wang-Yu ◽  
Yang Jian-Yu ◽  
Ao Bing-Yun ◽  
Wang Xiao-Lin ◽  
Chen Pi-Heng ◽  
...  
Keyword(s):  
Point Defects ◽  
Embedded Atom Method ◽  
Energy Calculation ◽  
Embedded Atom

Embedded-atom-method functions for the fcc metals Cu, Ag, Au, Ni, Pd, Pt, and their alloys

1986 ◽  
Vol 33 (12) ◽  
pp. 7983-7991 ◽  
Author(s):  
S. M. Foiles ◽  
M. I. Baskes ◽  
M. S. Daw
Keyword(s):  
Embedded Atom Method ◽  
Fcc Metals ◽  
Embedded Atom

Atomistic Simulations of Dislocation-Interface Interactions in the Cu-Ni Multilayer System

1999 ◽  
Vol 578 ◽  
Author(s):  
Satish I. Rao ◽  
Peter M. Hazzledine
Keyword(s):  
Yield Strength ◽  
Elastic Moduli ◽  
Lattice Parameter ◽  
Stacking Fault ◽  
Chemical Effect ◽  
Atomistic Simulations ◽  
Embedded Atom Method ◽  
Embedded Atom ◽  
Coherency Strains ◽  
Stacking Fault Energies

AbstractMultilayered Cu-Ni has a peak yield strength four orders of magnitude higher than either Cu or Ni because the multitude of interfaces obstruct glissile dislocations. The barrier strengths of the interfaces may be traced to four mismatches across an interface: modulus, lattice parameter, chemical and slip geometry. This paper describes sample embedded atom method (EAM) simulations of dislocations crossing interfaces, designed to separate the effects of the four mismatches. The results confirm some classical calculations and emphasize the importance of three new effects (i) an interface-chemical effect in which dislocations are trapped by core spreading in the interface, (ii) a coherency-chemical effect caused by coherency strains changing effective stacking fault energies and (iii) a coherency-modulus effect in which coherency strains change elastic moduli (and hence the Koehler stress) significantly.

The application of the analytic embedded atom method to bcc metals and alloys

1992 ◽  
Vol 7 (3) ◽  
pp. 639-652 ◽  
Author(s):  
A.M. Guellil ◽  
J.B. Adams
Keyword(s):  
Thermal Expansion ◽  
Predictive Power ◽  
Phonon Dispersion ◽  
Embedded Atom Method ◽  
Phonon Dispersion Curves ◽  
Fcc Metals ◽  
Surface Energies ◽  
Bcc Metals ◽  
Embedded Atom ◽  
And Migration

Johnson and Oh have recently developed Embedded Atom Method potentials for bcc metals (Na, Li, K, V, Nb, Ta, Mo, W, Fe). The predictive power of these potentials was first tested by calculating vacancy formation and migration energies. Due to the results of these calculations, some of the functions were slightly modified to improve their fit to vacancy properties. The modified potentials were then used to calculate phonon dispersion curves, surface relaxations, surface energies, and thermal expansion. In addition, Johnson's alloy model, which works well for fcc metals, was applied to the bcc metals to predict dilute heats of solution.

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