scholarly journals Dielectric properties and leakage current of MgO/(Ba0.8Sr0.2)TiO3 heterostructured films prepared by sol-gel technique

2006 ◽  
Vol 55 (4) ◽  
pp. 2069
Author(s):  
Jia Jian-Feng ◽  
Huang Kai ◽  
Pan Qing-Tao ◽  
Li Shi-Guo ◽  
He De-Yan
Keyword(s):  
Dielectric Properties ◽  
Leakage Current ◽  
Sol Gel ◽  
Gel Technique

Dielectric Properties of Sol - Gel Silica Glasses

1986 ◽  
Vol 72 ◽  
Author(s):  
G. V. Chandrashekhar ◽  
M. W. Shafer
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Elemental Carbon ◽  
Sol Gel ◽  
Fused Silica ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Silica Glasses ◽  
Low Dielectric ◽  
Gel Technique

AbstractDielectric properties have been measured for a series of porous and fully densified silica glasses, prepared by the sol-gel technique starting from Si-methoxide or Si-fume. The results for the partially densified glasses do not show any preferred orientation for porosity. When fully densified (˜2.25 gms/cc) without any prior treatment of the gels, they have dielectric constants of ≥ 6.5 and loss factors of 0.002 at 1 MHz, compared to values of 3.8 and <0.001 for commercial fused silica. There is no corresponding anomaly in the d.c. resistivity. Elemental carbon present to the extent of 400–500 ppm is likely to be the main cause for this enhanced dielectric constant. Extensive cleaning of the gels prior to densification to remove this carbon were not completely successful pointing to the difficulty in preparing high purity, low dielectric constant glasses via the organic sol-gel route at least in the bulk form.

Dielectric Properties of Mn, Co, and Ni-Doped LaSrFeO3 Films with Different Annealing Atmosphere

2015 ◽  
Vol 740 ◽  
pp. 28-31
Author(s):  
Yang Lu Hou ◽  
Xing Hua Fu ◽  
Wen Hong Tao ◽  
Hong Di Xue
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Film Surface ◽  
Annealing Atmosphere ◽  
Single Perovskite Phase ◽  
Gel Technique

Mn, Co, and Ni-doped La0.5Sr0.5FeO3 thin films were prepared by the sol-gel technique with different annesling atmosphere. The structure and dielectric properties of the films were researched by XRD, SEM and Agilent. The study found that LSF-Mn (Co, Ni) films under the argon annealing atmosphere were have optimal dielectric properties. And Mn, Co, Ni elements are integrated into La0.5Sr0.5FeO3 lattices with the single perovskite phase. And uniform grain was distribution on the film surface.

scholarly journals Structural, Magnetic and Dielectric Properties of Fe-Co Co-Doped Ba<sub>0.9</sub>Sr<sub>0.1</sub>TiO<sub>3</sub> Prepared by Sol Gel Technique

2014 ◽  
Vol 04 (02) ◽  
pp. 19-28 ◽  
Author(s):  
Inas Kamal Batttisha ◽  
Ibrahim Sayed Ahmed Farag ◽  
Mostafa Kamal ◽  
Mohamed Ali Ahmed ◽  
Emad Girgis ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Sol Gel ◽  
Gel Technique ◽  
Magnetic And Dielectric Properties ◽  
Co Doped

Antimicrobial Activity of Ga-Doped Hydroxyapatite Nanostructures: Synthesis, Morphological, Spectroscopic, and Dielectric Properties

2019 ◽  
Vol 9 (7) ◽  
pp. 881-889 ◽  
Author(s):  
Obaid Albulym ◽  
Omer Kaygili ◽  
Mai S. A. Hussien ◽  
H. Y. Zahran ◽  
Mona Kilany ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Sol Gel ◽  
Alternating Current ◽  
Inhibitory Effect ◽  
X Ray Diffraction ◽  
Carbonate Group ◽  
Ftir Technique ◽  
Gel Technique ◽  
Ga Content ◽  
Ft Raman

In the present paper, seven samples of hydroxyapatite (HAp) nanoparticles doped with different amounts (e.g., 0%, 1%, 3%, 6%, 9%, 12%, and 15% [wt.]) of Ga-ions were synthesized at low temperature using the microwave-assisted sol–gel technique. FT-Raman/Fourier-transform infrared (FTIR) technique, X-ray diffraction (XRD), dielectric/alternating current conductivity measurements, scanning electron microscopy, and antimicrobial tests were utilized in order to characterize the synthesized samples. The Ga content was observed to affect the crystallite size as well as the crystallinity of HAp. Variations were observed in the lattice parameters, lattice strain, and dislocation density. FTIR analysis revealed that HAp structure possessed the carbonate group. Thus all samples have promising medical applications, as this group improves the bioactivity of HAp. Dielectric properties, as well as the alternating current electrical conductivity, were also observed to be affected by the Ga content. Furthermore, the present study demonstrated that the Ga-doped HAp nanostructures exerted a considerable inhibitory effect on bacteria (Pseudomonas aeruginosa, Staphylococcus aureus, and Escherichia coli) and fungi (Candida albicans). Therefore, the Gadoped HAp nanostructures are proposed as a promising candidate for applications in the field of bone cement engineering.

Structure and Dielectric Properties of Mn, Co, and Ni-Doped LaSrFeO3 Films

2013 ◽  
Vol 575-576 ◽  
pp. 499-503
Author(s):  
Bin Fu ◽  
Yang Lu Hou ◽  
Wei Bing Wu ◽  
Xing Hua Fu
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Dielectric Properties ◽  
Smooth Surface ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Electrical Measurements ◽  
Doping Amount ◽  
Pure Perovskite Phase ◽  
Gel Technique

Mn, Co, and Ni-doped La0.5Sr0.5FeO3thin films were prepared by the sol-gel technique. The structure and dielectric properties of the films were studied by XRD, SEM, and electrical measurements. The morphology observation demonstrated these films had uniform grain size and smooth surface. The dielectric properties of La0.5Sr0.5FeO3films were improved by the replacement of Fe with Mn, Co, and Ni. The doping amount of Mn, Co, and Ni for the optimal dielectric properties of La0.5Sr0.5FeO3films is 5%, 2%, and 3%, respectively. The observed pure perovskite phase of the doped films suggested the dissolution of Mn, Co, and Ni in La0.5Sr0.5FeO3crystal lattice.

Structure and Characteristics of ZrO2 Dielectric Thin Films by Sol-Gel Technique

2014 ◽  
Vol 602-603 ◽  
pp. 767-770 ◽  
Author(s):  
Ching Fang Tseng ◽  
Chiu Yun Chen ◽  
Pei Wen Huang
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Annealing Temperature ◽  
Substrate Surface ◽  
Sol Gel ◽  
Dielectric Thin Films ◽  
Dielectric Characteristics ◽  
Impedance Analyzer ◽  
Annealing Temperatures ◽  
Gel Technique

Dielectric properties and microstructures of ZrO2thin films prepared by the sol-gel method at different annealing temperatures have been investigated. All films exhibited ZrO2(111) highly orientation perpendicular to the substrate surface and the grain size increased with increasing annealing temperature. Dielectric properties of the Ag/ZrO2/Ag/Si structure were measured by using HP 4192 Impedance Analyzer and Agilent 4155 Semiconductor Parameter Analyzer. The dependence of the microstructure and dielectric characteristics on annealing temperature was also investigated.

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