scholarly journals Room-temperature ferromagnetism in Mn-doped SnO2 diluted magnetic semiconductor

2005 ◽  
Vol 54 (6) ◽  
pp. 2934
Author(s):  
Kuang An-Long ◽  
Liu Xing-Chong ◽  
Lu Zhong-Lin ◽  
Ren Shang-Kun ◽  
Liu Cun-Ye ◽  
...  
Keyword(s):  
Room Temperature ◽  
Diluted Magnetic Semiconductor ◽  
Room Temperature Ferromagnetism ◽  
Magnetic Semiconductor ◽  
Diluted Magnetic ◽  
Mn Doped

DILUTED MAGNETIC SEMICONDUCTOR NANOWIRES

NANO ◽  
2008 ◽  
Vol 03 (01) ◽  
pp. 1-19 ◽  
Author(s):  
HEON-JIN CHOI ◽  
HAN-KYU SEONG ◽  
UNGKIL KIM
Keyword(s):  
Room Temperature ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Diluted Magnetic Semiconductor ◽  
Room Temperature Ferromagnetism ◽  
Magnetic Semiconductor ◽  
Building Blocks ◽  
Free Standing ◽  
Diluted Magnetic ◽  
Mn Doped

An idea for simultaneously manipulating spin and charge in a single semiconductor medium has resulted in the development of diluted magnetic semiconductors (DMSs), which exhibits surprisingly room temperature ferromagnetic signatures despite having controversial ferromagnetic origin. However, achievement of truly room temperature ferromagnetism by carrier mediation is still the subject of intense research to develop the practical spin-based devices. Nanowires with one-dimensional nanostructure, which offers thermodynamically stable features and typically single crystalline and defect free, have a number of advantages over thin films with respect to studying ferromagnetism in DMSs. This review focuses primarily on our works on GaN -based DMS nanowires, i.e., Mn -doped GaN , Mn -doped AlGaN and Cu -doped GaN nanowires. These DMS nanowires have room temperature ferromagnetism by the local magnetic moment of doping elements that are in a divalent state and in tetrahedral coordination, thus substituting Ga in the wurtzite-type network structure of host materials. Importantly, our evidences indicate that the magnetism is originated from the ferromagnetic interaction driven by the carrier. These outcomes suggest that nanowires are ideal building blocks to address the magnetism in DMS due to their thermodynamic stability, single crystallinity, free of defects and free standing nature from substrate. Nanowires themselves are ideal building blocks for nanodevices and, thus, it would also be helpful in developing DMS-based spin devices.

Room temperature ferromagnetism of Fe-doped ZnO and MgO thin films prepared by ink-jet printing

2012 ◽  
Vol 1394 ◽  
Author(s):  
Mei Fang ◽  
Wolfgang Voit ◽  
Adrica Kyndiah ◽  
Yan Wu ◽  
Lyubov Belova ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Diluted Magnetic Semiconductor ◽  
Room Temperature Ferromagnetism ◽  
Magnetic Semiconductor ◽  
Ink Jet ◽  
Jet Printing ◽  
Doped Zno ◽  
Diluted Magnetic ◽  
Magnetic Insulator

ABSTRACTRoom temperature magnetic properties of un-doped, as well as 10 at.% Fe-doped ZnO and MgO single-pass layer of ink-jet printed thin films have been investigated to obtain insight into the role of the band gaps and mechanisms for the origin of ferromagnetic order in these materials. It is found that on doping with Fe, the saturation magnetization is enhanced by several-fold in both systems when compared with the respective un-doped thin films. For a “28 nm thick film of Fe-doped ZnO (Diluted Magnetic Semiconductor, DMS) we observe an enhanced moment of 0.465μB /Fe atom while it is around 0.111μB/Fe atom for the doped MgO (Diluted Magnetic Insulator, DMI) film of comparable thickness. Also, the pure ZnO is far more ferromagnetic than pure MgO at comparable low film thicknesses which can be attributed to defect induced magnetism originating from cat-ion vacancies. However, the film thickness dependence of the magnetization and the defect concentrations are found to be significantly different in the two systems so that a comparison of the magnetism becomes more complex for thicker films.

Room Temperature Ferromagnetism in Novel Diluted Magnetic Semiconductor Cd1-xMnxGeP2

2000 ◽  
Vol 39 (Part 2, No. 10A) ◽  
pp. L949-L951 ◽  
Author(s):  
Gennadiy A. Medvedkin ◽  
Takayuki Ishibashi ◽  
Takao Nishi ◽  
Koji Hayata ◽  
Yoichi Hasegawa ◽  
...  
Keyword(s):  
Room Temperature ◽  
Diluted Magnetic Semiconductor ◽  
Room Temperature Ferromagnetism ◽  
Magnetic Semiconductor ◽  
Diluted Magnetic

scholarly journals Room temperature ferromagnetism in new diluted magnetic semiconductor AlN:Mg nanowires

CrystEngComm ◽  
2013 ◽  
Vol 15 (17) ◽  
pp. 3271 ◽  
Author(s):  
Yongsheng Xu ◽  
Binbin Yao ◽  
Dan Liu ◽  
Weiwei Lei ◽  
Pinwen Zhu ◽  
...  
Keyword(s):  
Room Temperature ◽  
Diluted Magnetic Semiconductor ◽  
Room Temperature Ferromagnetism ◽  
Magnetic Semiconductor ◽  
Diluted Magnetic

Origin of Room-Temperature Ferromagnetism for Cobalt-Doped ZnO Diluted Magnetic Semiconductor

2008 ◽  
Vol 25 (4) ◽  
pp. 1438-1441 ◽  
Author(s):  
Peng Long ◽  
Zhang Huai-Wu ◽  
Wen Qi-Ye ◽  
Song Yuan-Qiang ◽  
Su Hua ◽  
...  
Keyword(s):  
Room Temperature ◽  
Diluted Magnetic Semiconductor ◽  
Room Temperature Ferromagnetism ◽  
Magnetic Semiconductor ◽  
Doped Zno ◽  
Diluted Magnetic

scholarly journals Room-temperature ferromagnetism in diluted magnetic semiconductor Pb1−xCrxTe

2010 ◽  
Vol 200 (6) ◽  
pp. 062039 ◽  
Author(s):  
E A Zvereva ◽  
E P Skipetrov ◽  
O A Savelieva ◽  
N A Pichugin ◽  
A E Primenko ◽  
...  
Keyword(s):  
Room Temperature ◽  
Diluted Magnetic Semiconductor ◽  
Room Temperature Ferromagnetism ◽  
Magnetic Semiconductor ◽  
Diluted Magnetic
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