scholarly journals A novel FDTD simulation for plasma piecewise linear current density recursive convolution

2004 ◽  
Vol 53 (3) ◽  
pp. 778
Author(s):  
Liu Shao-Bin ◽  
Mo Jin-Jun ◽  
Yuan Nai-Chang
2017 ◽  
Vol 45 (7) ◽  
pp. 1134-1138 ◽  
Author(s):  
Lixue Chen ◽  
Junjia He ◽  
Shengguo Xia ◽  
Zhao Yuan ◽  
Hengxin He

2018 ◽  
Vol 82 (4) ◽  
pp. 390-393 ◽  
Author(s):  
S. I. Tkachenko ◽  
E. V. Grabovski ◽  
A. N. Gribov ◽  
G. M. Oleinik ◽  
A. O. Shishlov ◽  
...  

2019 ◽  
Vol 47 (5) ◽  
pp. 2479-2485 ◽  
Author(s):  
Weikang Zhao ◽  
Rong Xu ◽  
Youjun Kong ◽  
Weiqun Yuan ◽  
Ping Yan

2013 ◽  
Vol 634-638 ◽  
pp. 52-55
Author(s):  
An Ling Wang ◽  
Fu Ping Liu

According to the electric field intensity of ten-needle electrodes (OTNE) in vacuum, the discrete equations based on the indetermination linear current density were established by the boundary element integral equations (BEIE). The non-uniform distribution of the current flowing from ten-needle electrodes to conductive in vacuum was imaged by solving a set of linear equations. Then, the electric field intensity generated by OTNE in vacuum at any point can be determined through the boundary element method (BEM). It means that this method has an important referenced significance for computing the electric field intensity generated by OTNE in vacuum


2001 ◽  
Vol 693 ◽  
Author(s):  
Madhusudan Singh ◽  
Jaspirt Singh ◽  
Umesh Mishra

In this paper, we report calculations that show that a metal-polar semiconductor heterostructure can exhibit highly controllable non-linear current-voltage (I-V) characteristics. Change in barrier thickness can alter the characteristics from Schottky-like to ohmic in different bias regimes. The origin of these unusual effects is a large electric field (> 106 V/cm) and high sheet charge (∼1013 – 1014 cm-2) without doping, in the polar heterostructure. Theoretical calculation of the tunneling current density in these systems indicates that very interesting non-linear behaviour is shown by theseystems, ev en in the undoped case. Choice of suitable compositions of the materials and thicknesses can be used to tailor devices with desired characteristics.


Sign in / Sign up

Export Citation Format

Share Document