scholarly journals BLUE EMISSION AND INFRARED STUDY OF THE POROUS SILICON ANODIZED UNDER LASER ILLUMINATION

1998 ◽  
Vol 47 (1) ◽  
pp. 124
Author(s):  
LI PENG ◽  
MA YU-RONG ◽  
FANG RONG-CHUAN ◽  
HU KE-LIANG
Keyword(s):  
Porous Silicon ◽  
Blue Emission ◽  
Infrared Study ◽  
Laser Illumination

Comparative Optical Studies of Chemically Synthesized Silicon Nanocrystals

1996 ◽  
Vol 452 ◽  
Author(s):  
Gildardo R. Delgado ◽  
Howard W.H. Lee ◽  
Susan M. Kauzlarich ◽  
Richard A. Bley
Keyword(s):  
Porous Silicon ◽  
Silicon Nanocrystals ◽  
Surface Passivation ◽  
Theoretical Calculations ◽  
Dominant Role ◽  
Blue Emission ◽  
Surface States ◽  
Si Nanocrystals ◽  
Optical And Electronic Properties ◽  
Passivation Layers

AbstractWe studied the optical and electronic properties of silicon nanocrystals derived from two distinct fabrication procedures. One technique uses a controlled chemical reaction. In the other case, silicon nanocrystals are produced by ultrasonic fracturing of porous silicon layers. We report on the photoluminescence, photoluminescence excitation, and absorption spectroscopy of various size distributions derived from these techniques. We compare the different optical properties of silicon nanocrystals made this way and contrast them with that observed in porous silicon. Our results emphasize the dominant role of surface states in these systems as manifested by the different surface passivation layers present in these different fabrication techniques. Experimental absorption measurements are compared to theoretical calculations with good agreement. Our results provide compelling evidence for quantum confinement in both types of Si nanocrystals. Our results also indicate that the blue emission from very small Si nanocrystals corresponds to the bandedge emission, while the red emission arises from traps.

Influence of the Surfaces Characteristics on the Luminescent Property of Porous Silicon

2014 ◽  
Vol 1052 ◽  
pp. 181-187
Author(s):  
Yan Li Ding ◽  
Yue Zhao ◽  
Yue Feng ◽  
Xiao Yan Liang ◽  
Lin Jun Wang ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Porous Silicon ◽  
Luminescent Property ◽  
Blue Emission ◽  
Surface States ◽  
Green Emission ◽  
Decay Measurement ◽  
Photoconductivity Decay

Photoluminescence of porous silicon (PS) prepared by different etched time was studied. The photoluminescence might originate from the recombination of carriers and surface states, which was proved by FTIR, Raman spectroscopy and SEM. Furthermore, the hydrogen-related groups on the PS surface could eliminate the surface states for the blue emission, but the quantities of surface states for the green emission were depended on the uncovered area on the PS surface. Moreover, the shape of photoconductivity curve was depended on the quantities of the surface states, which also was related to the uncovered area on the PS surface. In addition, the results of the microwave-detected photoconductivity decay measurement indicated thatthe defects on the PS surface increased with the increase of the etched time, which would be related to the increase of the depth of pores.

Blue emission in porous silicon: Oxygen-related photoluminescence

1994 ◽  
Vol 49 (11) ◽  
pp. 7821-7824 ◽  
Author(s):  
L. Tsybeskov ◽  
Ju. V. Vandyshev ◽  
P. M. Fauchet
Keyword(s):  
Porous Silicon ◽  
Blue Emission ◽  
Silicon Oxygen

Blue emission of porous silicon intensified by boron deposition

2005 ◽  
Vol 40 (18) ◽  
pp. 5071-5073 ◽  
Author(s):  
Yue Zhao ◽  
Dongsheng Li ◽  
Deren Yang ◽  
Minghua Jiang
Keyword(s):  
Porous Silicon ◽  
Blue Emission

Effects of Gas Environments on Porous Silicon Photoluminescence

1999 ◽  
Vol 560 ◽  
Author(s):  
G. Di Francia ◽  
V. La Ferrara ◽  
L. Lancellotti ◽  
L. Quercia ◽  
T. Fasolino
Keyword(s):  
Porous Silicon ◽  
Oxide Layer ◽  
Electrochemical Etching ◽  
Peak Wavelength ◽  
Laser Illumination ◽  
Dry Air ◽  
Thin Oxide Layer ◽  
Thin Oxide ◽  
Photoluminescence Response

ABSTRACTThe photoluminescence response of a series of porous silicon samples, obtained by electrochemical etching of n-type CZ-silicon, has been recorded in various gas environments. A quenching is reported when porous silicon is in the presence of an oxidising ambient (dry air or acetone vapours in dry air). Process reversibility depends on the duration of laser illumination. Quenching is also recorded if porous silicon is in the presence of acetone vapours in nitrogen ambient, where complete reversibility is however shown. Moreover, the peak wavelength is red shifted in dry air and blue shifted in acetone vapours. Irreversible quenching is related to the growth of a thin oxide layer on the emitting nanostrucures.

STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF TiO2THIN FILM DEPOSITED ON THE NANO POROUS SILICON TEMPLATE

2017 ◽  
Vol 24 (Supp02) ◽  
pp. 1850017
Author(s):  
MAHMOOD BAHAR ◽  
ENSIEH KHALILI DERMANI
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Porous Silicon ◽  
Light Emission ◽  
Electrochemical Etching ◽  
Green Light ◽  
Blue Emission ◽  
Band Gap Energy ◽  
X Ray Diffraction ◽  
Green Light Emission

The porous silicon (PSi), which is produced by the electrochemical etching, has been used as a substrate for the growth of the titanium oxide (TiO2) thin films. By using the EBPVD method, TiO2thin films have been deposited on the surface of the PSi substrate. TiO2/PSi layers were annealed at the temperature of 400[Formula: see text]C, 500[Formula: see text]C and 600[Formula: see text]C for different tests. The morphology and structures of layers were investigated by the scanning electron microscopy (SEM) and X-ray diffraction (XRD). The current–voltage characteristic curves of samples and the ideality factor of heterojunction were studied. The results showed that the electrical properties of the samples change with increase in the annealing temperature. The optical properties of the prepared samples were investigated by using UV–Vis and photoluminescence (PL) spectroscopy. Green light emission of the PSi combined with the blue light and violet–blue emission obtained from the TiO2/PSi PL spectra. The results showed that the optical band gap energy of the PSi has increased from 1.86[Formula: see text]eV to 2.93[Formula: see text]eV due to the deposition of TiO2thin film.

Effect of chemical etching combined with laser illumination on the photoluminescence of porous silicon

1993 ◽  
Vol 13 (2) ◽  
pp. 193 ◽  
Author(s):  
J.Q. Duan ◽  
B.R. Zhang ◽  
L.Z. Zhang ◽  
J.C. Mao ◽  
G.G. Qin
Keyword(s):  
Porous Silicon ◽  
Chemical Etching ◽  
Laser Illumination
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