scholarly journals SURFACE AND INTERFACE SCATTERING EFFECTS ON QUANTUM TRANSPORT IN BIMETALLIC FILMS

1996 ◽  
Vol 45 (2) ◽  
pp. 249
Author(s):  
DONG ZHENG-CHAO ◽  
SHENG LI ◽  
XING DING-YU ◽  
DONG JIN-MING
Keyword(s):  
Quantum Transport ◽  
Surface And Interface ◽  
Interface Scattering ◽  
Scattering Effects ◽  
Bimetallic Films

Effects of Interface Scattering on the Electronic Conductivity of Bimetallic Films

1997 ◽  
Vol 11 (20) ◽  
pp. 2393-2404 ◽  
Author(s):  
Z. C. Dong ◽  
L. Sheng ◽  
Weiyi Zhang ◽  
D. Y. Xing ◽  
Jinming Dong
Keyword(s):  
Order Approximation ◽  
Electronic Conductivity ◽  
Interface Roughness ◽  
Total Conductivity ◽  
Rough Interface ◽  
Surface And Interface ◽  
Quantum Size ◽  
Interface Scattering ◽  
The One ◽  
Bimetallic Films

We have extended our previous study on the electronic transport in metallic films to include the rough interface using the quantum statistical approach. The one-particle Green's function and the in-plane conductivity are calculated by taking into account both the quantum size effects and scattering processes resulting from bulk impurities, rough surfaces, and a rough interface. Our result shows that the conductivity is a sensitive function of interface roughness and decreases rapidly as the roughness increases. It is found that in the thin-film limit and in the lowest-order approximation of the surface and interface scatterings, the total conductivity is given by a sum of conductivities of all the subbands and the scattering rates for each subband due to the impurities, surfaces, and interface are additive.

Sign reversal of anomalous Hall effect derived from the transformation of scattering effect in cluster-assembled Ni0.8Fe0.2 nanostructural films

Nanoscale ◽  
2021 ◽  
Author(s):  
Ning Jiang ◽  
Bo Yang ◽  
Yulong Bai ◽  
Yaoxiang Jiang ◽  
Shifeng Zhao
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Sign Reversal ◽  
Surface And Interface ◽  
Scattering Effect ◽  
Single Substance ◽  
Interface Scattering ◽  
Hall Effects

Both surface and interface scattering induced a sign reversal of anomalous Hall effects (AHE) in a few heterostructures. The sign reversal exiting in a single-substance can clarify the role of...

scholarly journals Effects of surface and interface scattering on anomalous Hall effect in Co/Pd multilayers

2012 ◽  
Vol 86 (10) ◽  
Author(s):  
Z. B. Guo ◽  
W. B. Mi ◽  
R. O. Aboljadayel ◽  
B. Zhang ◽  
Q. Zhang ◽  
...  
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Surface And Interface ◽  
Interface Scattering

Monte Carlo Simulation of Boundary Scattering Effects for Power MOSFET Performance

2003 ◽  
Author(s):  
A. Marathe ◽  
D. G. Walker
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Carrier Transport ◽  
Hot Carriers ◽  
Power Mosfets ◽  
Hot Carrier ◽  
Microelectronic Devices ◽  
Interface Scattering ◽  
Scattering Effects ◽  
Hot Carrier Effects

Miniaturization of microelectronic devices has lead to many new issues not seen in larger structures, such as hot carrier effects and interfacial effects. In power MOSFETs, degradation of the transconductance can occur over the lifetime of a device. This decrease in performance is a result of hot carriers in the channel region scattering at a Si/SiO2 interface that has been passivated with hydrogen. Eventually hot carriers liberate the hydrogen, leaving silicon bonds with an entirely different scattering cross section. The current work presents a Monte Carlo simulation of carrier transport in silicon near an interface. Scattering parameters at the interface are parameterized and studied. It was found that electron mobility, which is proportional to transconductance, is a function of the energy loss rate and type of scattering at the interface. Results indicate that dangling bonds and H-Si bonds can be characterized by different scattering mechanisms.

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