scholarly journals MONTE CARLO SIMULATION OF MBE GROWTH ON GaAs VICINAL SURFACE

1994 ◽  
Vol 43 (7) ◽  
pp. 1118
Author(s):  
MAO HUI-BING ◽  
LU WEI ◽  
MA ZHAO-HUI ◽  
LIU XING-QUAN ◽  
SHEN XUE-CHU
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Vicinal Surface ◽  
Mbe Growth

scholarly journals Comparative Study of MBE Growth on Si(001) and GaAs(001) by Monte Carlo Simulation.

Shinku ◽  
1999 ◽  
Vol 42 (3) ◽  
pp. 147-150
Author(s):  
Takaaki KAWAMURA ◽  
Akira ISHII
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Comparative Study ◽  
Mbe Growth

Comparative Characteristics of GaAs and InAs Langmuir Evaporation - Monte Carlo Simulation

2018 ◽  
Vol 386 ◽  
pp. 27-32 ◽  
Author(s):  
Anna A. Spirina ◽  
Igor Neizvestny ◽  
Nataliya L. Shwartz
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
High Temperature ◽  
Surface Morphology ◽  
Indium Arsenide ◽  
Transformation Kinetic ◽  
High Temperature Annealing ◽  
Vicinal Surface ◽  
Evaporation Temperature ◽  
Terrace Width

The process of GaAs and InAs substrates high-temperature annealing under the Langmuir evaporation conditions is studied by Monte Carlo simulation. The temperature range of gallium arsenide and indium arsenide congruent and incongruent evaporation are determined. It was demonstrated that the congruent evaporation temperature Tc is sensitive to the vicinal surface terrace width. The decrease of the terrace width results in a decrease in the congruent evaporation temperature. The Ga and In diffusion lengths along the (111)A and (111)B surfaces at congruent temperatures are estimated. The surface morphology transformation kinetic during high-temperature annealing is analyzed.

Structural feature of surface in MBE growth Monte Carlo simulation

1996 ◽  
Vol 163 (1-2) ◽  
pp. 22-30 ◽  
Author(s):  
Toshiharu Irisawa ◽  
Yoshiyasu Arima
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Structural Feature ◽  
Mbe Growth

MONTE-CARLO SIMULATION OF MBE GROWTH OF GaAs ANALYSIS OF RHEED

1997 ◽  
Vol 04 (05) ◽  
pp. 869-872 ◽  
Author(s):  
P. J. VAN HALL ◽  
H. KÖKTEN ◽  
M. R. LEYS ◽  
M. BOSCH
Keyword(s):  
Experimental Data ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Slow Component ◽  
Mbe Growth ◽  
Partial Desorption

We have performed Monte-Carlo simulations of the growth of GaAs by MBE. We included in our calculations the anisotropy of the migration, the formation of As-and a partial desorption of the As. As an observable we calculated the RHEED signal of the specularly reflected electrons. The results have been compared with experimental data comprising both the damping of the oscillations and the recovery following a growth interrupt. The agreement between experiment and calculations is rather good. Moreover we could identify the mechanisms underlying the fast and the slow component of the recovery.

Monte Carlo Simulation of Mbe Growth of GaAs Analysis of Rheed

1996 ◽  
pp. 229-234
Author(s):  
P. J. van Hall ◽  
H. Kökten ◽  
M. R. Leys ◽  
M. Bosch
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Mbe Growth
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