AbstractThe Raman scattering from LO phonon–plasmon coupled (LOPC) mode in heavily carbon doped p–type InxGa1–xAs grown by metalorganic molecular beam epitaxy (MOMBE) was studied experimentally. Only one LOPC mode appears between the GaAs–like and InAs–like LO modes was observed. The peak position of the LOPC mode is near the GaAs–like TO mode frequency, and is not sensitive to the hole concentration. The intensity of the mode increases with increasing the carrier concentration while the two LO modes decrease and become unvisible under the higher doping level. The hole concentration dependence of the linewidth and intensity of the LOPC mode is very similar to that in p–type GaAs. It was shown that the plasmon damping effect plays a dominant role in the p–type doping case.
RAMAN SCATTERING STUDY OF LO PHONON-PLASMON COUPLED MODE IN HEAVILY CARBON DOPED p-TYPE GaAs