scholarly journals TEMPERATURE DEPENDENCE OF ELECTRIC RESISTIVITY OF Nd-Fe AMORPHOUS THIN FILMS AND ITS THERMAL STABILITY

1993 ◽  
Vol 42 (5) ◽  
pp. 840
Author(s):  
Lyu Man-qi ◽  
A. WAGENDRISTEL
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Temperature Dependence ◽  
Electric Resistivity ◽  
Amorphous Thin Films

Temperature dependence of energy gap of amorphous thin films of Zn3P2

Vacuum ◽  
1998 ◽  
Vol 50 (1-2) ◽  
pp. 5-7 ◽  
Author(s):  
L Bryja ◽  
K Jezierski ◽  
M Ciorga ◽  
A Bohdziewicz ◽  
J Misiewicz
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Energy Gap ◽  
Amorphous Thin Films

Temperature dependence of the absorption edge in CdTe:O amorphous thin films

1992 ◽  
Vol 84 (4) ◽  
pp. 409-411 ◽  
Author(s):  
F.J Espinoza-Beltrán ◽  
F Sánchez-Sinencio ◽  
O Zelaya-Angel ◽  
E López-Cruz ◽  
J González-Hernández ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Absorption Edge ◽  
Amorphous Thin Films

Thermal Stability of Amorphous Ni-Nb Thin Films for Use as Diffusion Barriers

1987 ◽  
Vol 108 ◽  
Author(s):  
S. N. Farrens ◽  
J. H. Perepezko ◽  
B. L. Doyle ◽  
S. R. Lee
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
X Ray Diffraction ◽  
Free Standing ◽  
X Ray ◽  
Amorphous Thin Films ◽  
Si Substrates ◽  
Sputter Deposited ◽  
Film Substrate ◽  
Thermal Stability Of

ABSTRACTThe interdiffusion and crystallization reactions between amorphous Ni-Nb alloy films and Si substrates and several overlayer metals have been monitored by x-ray diffraction and high resolution Rutherford backscattering spectroscopy. Free standing amorphous thin films of Ni-Nb alloys crystallize in one hour at temperatures between 600–625 °C and show little dependence of the crystallization temperature, Tx, on composition over the range from 30–80 at.% Ni. However, in films that are sputter deposited onto Si substrates Tx tends to increase with increasing Nb composition. Ni60Nb40 samples without overlayers crystallize at 650–700 °C. Enhancement of the thermal stability to 700–750 °C is achieved with a Nb overlayer. In contrast, a Ni overlayer can reduce Tx to 450 °C. At the film/substrate interface silicide formation reactions with Ni from the film contribute to a destabilization of the amorphous alloy. The modification of Tx with Ni, Nb, and other overlayers appears to be related to changes in the reaction kinetics associated with penetration of the overlayer into the film.

Formation and thermal stability of quasi-amorphous thin films

2005 ◽  
Vol 71 (9) ◽  
Author(s):  
V. Lyahovitskaya ◽  
Y. Feldman ◽  
I. Zon ◽  
E. Wachtel ◽  
K. Gartsman ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Amorphous Thin Films ◽  
Thermal Stability Of

Superconducting characteristics and the thermal stability of tungsten-based amorphous thin films

1992 ◽  
Vol 7 (4) ◽  
pp. 853-860 ◽  
Author(s):  
Seiichi Kondo
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Electrical Resistivity ◽  
Amorphous Alloy ◽  
Diffraction Analysis ◽  
Superconducting State ◽  
X Ray Diffraction ◽  
X Ray ◽  
Amorphous Thin Films ◽  
Thermal Stability Of

Superconducting characteristics and the thermal stability of sputtered, tungsten-based, amorphous thin films are investigated. Electronic properties and crystalline structures are analyzed as a function of the metalloid content in the films. It is well known that the superconducting Tc of a bulk crystalline tungsten is 0.01 K, which is one of the lowest transition temperatures among the superconducting metals. We have found that the W film containing 5 to 70 at. % metalloids exhibits a great enhancement in Tc. In the region of 15 to 35 at. % metalloids, the Tc shows the maximum of 5.0 K, and the transition from normal to superconducting state occurs very sharply. SEM observation together with x-ray diffraction analysis indicates that these films are amorphous in structure. The electrical resistivity is about 150 μΩ-cm, and shows little temperature dependence from Tc to 300 K. In addition, the W–Si amorphous superconductor is thermally very stable after annealing at 700 °C, but the W–Ge amorphous alloy crystallizes at 600 °C.

The temperature dependence of the surface anisotropy energy of amorphous thin films

1985 ◽  
Vol 127 (1-2) ◽  
pp. 123-128
Author(s):  
L.J. Maksymowicz ◽  
D. Sendorek ◽  
R. Ż;uberek
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Anisotropy Energy ◽  
Surface Anisotropy ◽  
Amorphous Thin Films
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