scholarly journals STUDIES AND ANALYSIS FOR MICROSTRUCTURES OF MICRO-CRYSTALLIZATION PROCESS OF AMORPHOUS SILICON FILMS

1990 ◽  
Vol 39 (11) ◽  
pp. 1796
Author(s):  
HE YU-LIANG ◽  
ZHOU HENG-NAN ◽  
LIU XIANG-NA ◽  
CHENG GUANG-XU ◽  
YU SHI-DONG
Keyword(s):  
Amorphous Silicon ◽  
Crystallization Process ◽  
Silicon Films

Crystallization of Tin-Implanted Amorphous Silicon Thin Films

1992 ◽  
Vol 279 ◽  
Author(s):  
Fuyu Lin ◽  
Miltiadis K. Hatalis
Keyword(s):  
Amorphous Silicon ◽  
Crystallization Process ◽  
Silicon Films ◽  
Grain Structure ◽  
Crystallization Time ◽  
Silicon Thin Films ◽  
Fine Grain ◽  
Annealing Conditions ◽  
Transmission Electron ◽  
Si Films

ABSTRACTThe crystallization of Sn-implanted amorphous silicon was studied as a function of tin implant dose and annealing conditions by transmission electron microscopy. The films were implanted at an energy of 110 keV with a dose in the range of 5 × 1014 to 5×1016 cm−2 and were annealed at a temperature in the range of 450°C to 550°C. An enhanced rate of crystallization in amorphous Si-Sn films compared to the non-implanted amorphous silicon films during thermal annealing was observed. The crystallization process of Si films implanted with tin at a dose of 2.5×1016 cm−2 or less is very similar to unimplanted silicon films except higher nucleation rates and shorter crystallization time were observed with increasing tin dose. Films implanted with tin at a dose of 2.5×1016 cm−2 or more display extremely rapid crystallization (3 hours at 450°C) and very fine grain structure (10 nm); no substantial grain growth has been observed during lurther annealing, but some single crystal-like areas were formed. In-situ annealing of silicon implanted to 5×1016 cm−2 showed that the crystallization process is enhanced by the formation of the liquid tin phase.

HYDROGEN PROFILING IN GAS PHASE DOPED AND ION IMPLANTED AMORPHOUS SILICON FILMS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-779-C4-782 ◽  
Author(s):  
F. J. Demond ◽  
G. Müller ◽  
H. Damjantschitsch ◽  
H. Mannsperger ◽  
S. Kalbitzer ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Gas Phase ◽  
Silicon Films ◽  
Ion Implanted

Structural, Optical, and Electrical Properties of Amorphous Silicon Films

1970 ◽  
Vol 1 (6) ◽  
pp. 2632-2641 ◽  
Author(s):  
M. H. Brodsky ◽  
R. S. Title ◽  
K. Weiser ◽  
G. D. Pettit
Keyword(s):  
Electrical Properties ◽  
Amorphous Silicon ◽  
Silicon Films ◽  
Optical And Electrical Properties
Sign in / Sign up

Export Citation Format

Share Document